Amorphous oxide semiconductors have been widely studied as key materials for flat panel displays and flexible electronics devices. Recently, it has been reported that an amorphous mixed‐anion semiconductor consisting of only earth‐abundant elements, zinc oxynitride, shows high electron mobility and good performance as the channel layer of a thin‐film transistor. However, amorphous zinc oxynitrides are unstable in air. It is demonstrated that another type of earth‐abundant amorphous mixed‐anion semiconductor, amorphous zinc oxysulfide (a‐ZnO_xS_y) thin film, exhibits electron mobilities comparable to those of conventional amorphous oxide semiconductors, in addition to good chemical stability under ambient conditions. a‐ZnO_xS_y thin films with a wide compositional range are fabricated through pulsed laser deposition, by alternately depositing ZnO and ZnS. Their transport properties can be controlled by adjusting the laser fluence and anion composition, and conductive a‐ZnO_xS_y thin films (≈0.30 ≤ y/(x + y) ≤ ≈0.35) show high electron Hall mobilities of 10–15 cm² V⁻¹ s⁻¹ at a carrier density of < ≈10¹⁸ cm⁻³. Furthermore, the Hall mobility can be maintained in air for at least 12 months. An a‐ZnO_xS_y thin‐film transistor with a bottom‐gate and top contact configuration shows clear field effect transistor behavior, although its performance is so far moderate.

中文翻译：

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富含地球元素的高迁移率和空气稳定的非晶半导体：非晶态氧化硫锌

非晶氧化物半导体已被广泛研究为平板显示器和柔性电子设备的关键材料。最近，有报道称，仅由富含地球的元素组成的非晶混合阴离子半导体即氧氮化锌，具有很高的电子迁移率和良好的性能，可作为薄膜晶体管的沟道层。但是，无定形氮氧化锌在空气中不稳定。结果表明，另一种富含地球的非晶态混合阴离子半导体非晶态氧硫化锌（a-ZnO _x S _y）薄膜除了在环境下具有良好的化学稳定性外，还具有与常规非晶态氧化物半导体相当的电子迁移率。情况。ZnO _x S _y通过脉冲激光沉积，交替沉积ZnO和ZnS来制造具有宽组成范围的薄膜。其传输特性可以通过调节激光能量密度和阴离子组成，和一个导电的ZnO系来控制_X小号_Ý薄膜（≈0.30≤ Ý /（X + Ý）≤≈0.35）示出的10-15厘米高的电子迁移率霍尔² V ^-1 s ^ ^-1在<≈10载流子密度¹⁸厘米^-3。此外，大厅的流动性可以在空中保持至少12个月。a-ZnO _x S _y 尽管到目前为止性能中等，但具有底栅和顶触点配置的薄膜晶体管显示出清晰的场效应晶体管行为。