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An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide
Nature Electronics ( IF 34.3 ) Pub Date : 2019-10-07 , DOI: 10.1038/s41928-019-0305-3
Mayur Ghatge , Glen Walters , Toshikazu Nishida , Roozbeh Tabrizian

Nanomechanical resonators that can operate in the super high frequency (3–30 GHz) or the extremely high frequency (30–300 GHz) regime could be of use in the development of stable frequency references, wideband spectral processors and high-resolution resonant sensors. However, such operation requires the dimensions of the mechanical resonators to be reduced to tens of nanometres, and current devices typically rely on transducers, for which miniaturization and chip-scale integration are challenging. Here, we show that integrated nanoelectromechanical transducers can be created using 10-nm-thick ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) films. The transducers are integrated on silicon and aluminium nitride membranes, and can yield resonators with frequencies from 340 kHz to 13 GHz and frequency–quality-factor products of up to 3.97 × 1012. Using electrical and optical probes, we show that the electromechanical transduction behaviour of the Hf0.5Zr0.5O2 film is based on the electrostrictive effect, and highlight the role of nonlinear electromechanical scattering in the operation of the resonator.



中文翻译:

基于氧化z锆的超薄集成纳米机电换能器

可以在超高频率(3–30 GHz)或极高频率(30–300 GHz)范围内运行的纳米机械谐振器可用于开发稳定的频率参考,宽带频谱处理器和高分辨率谐振传感器。但是,这样的操作要求将机械谐振器的尺寸减小到数十纳米,并且当前设备通常依赖于换能器,对此,小型化和芯片级集成是有挑战性的。在这里,我们表明可以使用10 nm厚的铁电electric氧化锆(Hf 0.5 Zr 0.5 O 2)电影。换能器集成在氮化硅和氮化铝膜上,可产生频率范围为340 kHz至13 GHz且频率品质因数积高达3.97×10 12的谐振器。使用电和光学探针,我们表明Hf 0.5 Zr 0.5 O 2膜的机电转换行为基于电致伸缩效应,并突出了非线性机电散射在谐振器工作中的作用。

更新日期:2019-10-07
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