Light: Science & Applications ( IF 19.4 ) Pub Date : 2019-07-10 , DOI: 10.1038/s41377-019-0174-6 Nguyen H. Le , Grigory V. Lanskii , Gabriel Aeppli , Benedict N. Murdin
Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption has useful applications, it is primarily a loss process; conversely, the non-linear susceptibility is a crucial parameter for active photonic devices. For Si:P, we predict the hyperpolarizability ranges from χ(3)/n3D = 2.9 to 580 × 10−38 m5/V2 depending on the frequency, even while avoiding resonance. Using samples of a reasonable density, n3D, and thickness, L, to produce third-harmonic generation at 9 THz, a frequency that is difficult to produce with existing solid-state sources, we predict that χ(3) should exceed that of bulk InSb and χ(3)L should exceed that of graphene and resonantly enhanced quantum wells.
中文翻译:
硅和锗中氢供体的巨大非线性磁化率
隐式求和是一种将多光子吸收中的中间态和与氢的高阶磁化率转换为简单积分的技术。在这里,我们推导了多谷半导体中氢杂质的等效技术。尽管吸收具有有用的应用,但它主要是损失过程;相反,非线性磁化率是有源光子器件的关键参数。对于Si:P ,即使避免共振,我们也会根据频率预测超极化率范围为χ (3) / n 3D = 2.9至580×10 -38 m 5 / V 2。使用合理密度的样本,n 3D和厚度L,以产生9 THz的三次谐波,这是现有固态光源难以产生的频率,我们预测χ (3)应该超过整体InSb的频率,而χ (3)L应该超过整体InSb的频率。超过了石墨烯和共振增强的量子阱。