Abstract Silicon carbide (SiC) is recognized as one of the shining stars of third generation semiconductors, because of its preeminent characteristics, for instance, outstanding mechanical behavior, exceptional chemical inertness, high thermal stability, and high thermal conductivity, which represent its unique advantage and importance to be serviced under high-power/high-temperature/high-voltage harsh environments. In this review, we firstly present a comprehensive overview on the designed growth of one-dimensional (1D) SiC nanostructures in fruitful morphologies with tailored doping, followed by a detailed discussion to highlight a range of intriguing properties. Subsequently, the state-of-the-art research activities regarding their extensive applications are systematically summarized, including field emitters, supercapacitors, field-effect transistors, photocatalysts, pressure sensors, microwave absorption, superhydrophobic coating, and so forth. Finally, the future prospects and research directions of 1D SiC nanostructures are proposed.

中文翻译：

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一维 SiC 纳米结构：设计的生长、特性和应用

摘要 碳化硅（SiC）被公认为第三代半导体中的一颗耀眼之星，因其卓越的力学性能、优异的化学惰性、高热稳定性和高导热性等突出特点，代表了其独特的优势。以及在大功率/高温/高压恶劣环境下维修的重要性。在这篇综述中，我们首先全面概述了一维 (1D) SiC 纳米结构在具有定制掺杂的富有成效的形态中的设计生长，然后详细讨论以突出一系列有趣的特性。随后，系统总结了有关其广泛应用的最新研究活动，包括场发射器、超级电容器、场效应晶体管、光催化剂、压力传感器、微波吸收、超疏水涂层等。最后，提出了一维碳化硅纳米结构的未来展望和研究方向。