High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In₂Se₃ confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of ultrathin α‐In₂Se₃ and graphene is demonstrated. The resistance of the graphene channel in the FeFET is effectively controllable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α‐In₂Se₃. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top‐gate ferroelectric. The 2D FeFET can be randomly rewritten over more than 10⁵ cycles without losing the nonvolatility. The approach demonstrates a prototype of rewritable nonvolatile memory with ferroelectricity in van der Waals 2D materials.

中文翻译：

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超薄α-In2Se3中的非易失性铁电记忆效应

高密度存储器是固态电子设备中不可或缺的一部分。2D铁电体为开发具有非易失性功能的超薄电子设备提供了一个新平台。层状α-在最近的实验₂硒₃确认其室温环境条件下外的平面铁电性。在此，在一个混合2D铁电场效应晶体管的非易失性存储器效应（强电介质FET）制成超薄α-在₂硒₃和石墨烯是证明。FeFET中石墨烯通道的电阻可有效地控制和保持，这归因于静电掺杂，这归因于铁电体α‐In ₂ Se ₃的电极化。可以用顶极铁电体中不同方向的电偶极子表示和存储电子逻辑位。可以在超过10 ⁵个周期内随机重写2D FeFET，而不会失去非易失性。该方法演示了范德华2D材料中具有铁电性的可重写非易失性存储器的原型。