Abstract Bismuth magnesium niobate (Bi3/2MgNb3/2O7, BMN) thin films were prepared on bare SiO2/HR-Si and Pt/TiO2/SiO2/HR-Si substrates by using sol-gel spin coating technique followed by rapid thermal annealing process. The influence of the interface on crystalline structure and tunable dielectric properties of the two types of BMN films were investigated. It was found that the BMN films prepared on SiO2/Si substrate with a BMN/SiO2 interface structure had higher orientation and better crystallinity. The deposited BMN thin films with a BMN/SiO2 interface structure exhibited superior tunability of 52.5%, while it showed a relative small tunability value of the film with BMN/Pt interface structure. It suggests that the interface state between the films and substrates, electric field distribution, and orientation degree are responsible for the impacts on the microstructure and tunable dielectric properties of the BMN thin films.

中文翻译：

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界面结构对铌酸铋镁薄膜微观结构和介电性能的影响

摘要 采用溶胶-凝胶旋涂技术和快速热退火工艺，在裸SiO2/HR-Si和Pt/TiO2/SiO2/HR-Si衬底上制备了铌酸铋镁（Bi3/2MgNb3/2O7，BMN）薄膜。研究了界面对两种BMN薄膜的晶体结构和可调介电性能的影响。发现在具有 BMN/SiO2 界面结构的 SiO2/Si 衬底上制备的 BMN 薄膜具有更高的取向和更好的结晶度。沉积的具有 BMN/SiO2 界面结构的 BMN 薄膜表现出 52.5% 的优异可调性，而具有 BMN/Pt 界面结构的薄膜的可调性值相对较小。它表明薄膜和基板之间的界面状态、电场分布、