It is demonstrated that atomic species differing in covalent tetrahedral radii are not randomly distributed in mixed III–V and III–N layers. They self-assemble into phase separated and ordered regions.

The salient features of phase separation in InGaAsP and InGaN layers are presented and discussed. The occurrence of atomic ordering in InGaAsP, InGaAs, and InGaN layers is considered. The mechanisms of the formation of double and triple period super-lattices in arsenides and phosphides are presented. The influence of these microstructural features on the degradation resistance of III–V emitters is discussed.

中文翻译：

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III–V和III–N混合层中的自组装纳米结构及其对发射体的影响

结果表明，共价四面体半径不同的原子种类并非随机分布在III–V和III–N混合层中。它们自组装成相分离和有序的区域。

介绍并讨论了InGaAsP和InGaN层中相分离的显着特征。可以考虑在InGaAsP，InGaAs和InGaN层中发生原子有序化。介绍了在砷化物和磷化物中形成双周期和三周期超晶格的机理。讨论了这些微结构特征对III–V发射极的耐降解性的影响。