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Photon management of GaN-based optoelectronic devices via nanoscaled phenomena
Progress in Quantum Electronics ( IF 11.7 ) Pub Date : 2016-09-01 , DOI: 10.1016/j.pquantelec.2016.08.001
Yu-Lin Tsai , Kun-Yu Lai , Ming-Jui Lee , Yu-Kuang Liao , Boon S. Ooi , Hao-Chung Kuo , Jr-Hau He

Abstract Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells.

中文翻译:

通过纳米级现象对基于 GaN 的光电器件进行光子管理

摘要 光子管理对于提高包括发光二极管、太阳能电池和光电探测器在内的光电器件的性能至关重要。除了材料生长和器件结构设计的进步之外,通过纳米级现象进行的光子管理也已被证明是进一步修改/提高器件性能的有前途的方法。通过纳米级现象进行光子管理所取得的成就包括应变诱导极化场管理、晶体质量改进、光提取/收集增强、辐射模式控制和光谱管理。在这篇综述中,我们总结了基于 GaN 的发光二极管和太阳能电池中光子管理的最新发展、挑战和基础物理。
更新日期:2016-09-01
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