Abstract In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber–barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

中文翻译：

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HgCdTe 屏障红外探测器

摘要 在过去十年中，已经提出了实现高工作温度 (HOT) 探测器的新策略，包括势垒结构，如 nBn 器件、单极势垒光电二极管和多级（级联）红外探测器。在断隙 II 型超晶格中独立调整导带和价带边缘位置的能力对单极势垒的设计特别有帮助。这个想法也已经在 HgCdTe 三元材料系统中实现。然而，由于吸收体-势垒界面处存在价带不连续性（势垒），因此在 HgCdTe 材料系统中实现这种探测器结构并不简单。在本文中，我们介绍了 HgCdTe 势垒探测器的现状，重点介绍了最近在军事技术大学应用物理研究所制造的 MOCVD 生长的 HgCdTe 势垒探测器的技术进步。它们的性能可与最先进的 HgCdTe 光电二极管相媲美。从器件制造的角度来看，它们重要的技术优势源于不太严格的表面钝化要求和对螺纹位错的耐受性。