Abstract Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

中文翻译：

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III-氮化物纳米线光电子学

摘要 III 族氮化物纳米线结构，包括 GaN、InN、AlN 及其合金，在过去的十年中得到了深入的研究。这种材料系统的独特之处在于其能带隙可以从深紫外（AlN 约 6.2 eV）到近红外（InN 约 0.65 eV）进行调节。在本文中，我们概述了 III 族氮化物纳米线光电器件的最新进展，包括发光二极管、激光器、光电探测器、单光子源、带内器件、太阳能电池和人工光合作用。还讨论了 III 族氮化物纳米线光电器件的当前挑战和未来前景。