Coupling between surface plasmons (SPs) and excitons can be used to enhance the emission efficiencies of light-emitting materials and devices. This approach had been theoretically predicted and, in 2004, was experimentally demonstrated by our group for enhancing the visible emission from InGaN/GaN quantum wells (QWs). Exciton–SP coupling increases the spontaneous emission rates of the excited states, causes a relative reduction in nonradiative relaxation, and ultimately increases the internal quantum efficiencies (IQEs) of such devices. Here, we present a brief history of the increases in emission efficiency that have been achieved and the underlying mechanism thereof. This method has the potential to enable the development of high-efficiency light-emitting diodes (LEDs), eventually leading to the replacement of fluorescent lights with solid-state light sources. After the initial discovery of this phenomenon, many device structures were proposed and reported; however, their emission efficiencies have thus far remained insufficient for practical application. Here, we also present recent progress on device applications and the current problems that must be solved. Finally, we explain the future possibilities regarding the extension of SP-enhanced light emission over a broader wavelength region, from the deep ultraviolet (UV) to the infrared (IR).

表面等离激元（SP）和激子之间的耦合可用于增强发光材料和器件的发射效率。从理论上预测了这种方法，并在2004年由我们的小组通过实验证明了该方法可增强InGaN / GaN量子阱（QW）的可见光发射。激子-SP耦合增加了激发态的自发发射速率，引起了非辐射弛豫的相对减少，并最终提高了此类器件的内部量子效率（IQE）。在这里，我们介绍了已实现的排放效率提高的简要历史以及其潜在机理。这种方法具有开发高效发光二极管（LED）的潜力，最终导致用固态光源代替荧光灯。最初发现此现象后，提出并报告了许多器件结构。然而，迄今为止，它们的发射效率仍不足以用于实际应用。在这里，我们还介绍了设备应用方面的最新进展以及必须解决的当前问题。最后，我们解释了从深紫外（UV）到红外（IR）在更宽的波长范围内扩展SP增强的光发射的未来可能性。我们还将介绍设备应用方面的最新进展以及当前必须解决的问题。最后，我们解释了从深紫外（UV）到红外（IR）在更宽的波长范围内扩展SP增强的光发射的未来可能性。我们还将介绍设备应用方面的最新进展以及当前必须解决的问题。最后，我们解释了从深紫外（UV）到红外（IR）在更宽的波长范围内扩展SP增强的光发射的未来可能性。