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Nitrogen admixture effects on growth characteristics and properties of carbon nanowalls Thin Solid Films (IF 2.1) Pub Date : 2024-03-30 Peter Raj Dennis Christy, Ngo Van Nong, Nikolay Britun, Ngo Quang Minh, Thi-Thuy-Nga Nguyen, Hiroki Kondo, Osamu Oda, Kenji Ishikawa, Masaru Hori
The plasma functionalization of carbon nanowalls (CNWs) is of great interest due to their potential applications in electron field emission and energy storage devices. In this study, the effects of nitrogen on the growth and properties of CNWs are thoroughly investigated by varying a wide range of the N concentrations in the CH/H/N discharge plasma. Nitrogen-doped carbon nanowalls (NCNWs) were synthesized
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Structural, optical and electrical studies of non-toxic oxide- RMnO3 [R=Y, Er, Yb] hexagonal manganite thin-films Thin Solid Films (IF 2.1) Pub Date : 2024-03-30 D R Inchara, S C Gurumurthy, M S Murari, Mamatha D Daivajna
Recently, ferroelectric-photovoltaics have come under the spotlight as a potential class of materials for application in photovoltaic devices. However, the broad bandgap of these ferroelectric-photovoltaic materials causes them to have modest photocurrents[1]. To overcome this challenge hexamanganites can be used to achieve high photovoltaic efficiency as it has a small band gap. Here we present a
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Thickness dependence of structural and magnetic properties of electrodeposited Co2FeSn films Thin Solid Films (IF 2.1) Pub Date : 2024-03-26 Pushpesh Pathak, Gajendra Singh Bisht, Ananthakrishnan Srinivasan
CoFeSn films have been electrochemically deposited on polycrystalline Cu substrates in potentiostatic mode. Processed films with thicknesses of 320 nm, 780 nm, and 1400 nm exhibited highly ordered type crystal structure with saturation magnetizations of 1023.38 kA/m (5.08 ± 0.04 μ/f.u.), 1035.31 kA/m (5.14 ± 0.04 μ/f.u.) and 1044.34 kA/m (5.18 ± 0.04 μ/f.u.) at 5 K and 965.00 kA/m (4.79 ± 0.04 μ/f
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Interfacial carbon quantum dot thin film impacts on morphological and chemical structures of fluorine-doped tin oxide films Thin Solid Films (IF 2.1) Pub Date : 2024-03-26 Ki-Won Lee, Myeong-Hun Jo, Hyo-Jin Ahn
Morphology and chemical bonding states, including surface roughness, film density, F-doping, and oxygen vacancy (V) concentration directly affect the electrical and optical properties of fluorine-doped tin oxide (FTO) films. In this study, morphology and chemical bonding states of FTO films are engineered simultaneously by introducing a carbon quantum dot (CQD) thin film as an interface layer during
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Comparative study of the near-infrared detection of PbSe fabricated using a sputter deposition method Thin Solid Films (IF 2.1) Pub Date : 2024-03-23 Sunjae Kim, Sungwoon Choo, Yongki Kim, Wan Sik Hwang, Myunghun Shin
Near-infrared (NIR) light is used in nondestructive spectroscopies to analyze various compounds in several applications. A PbSe nanocrystal film used in NIR detectors is fabricated using a magnetron sputtering process. The PbSe NIR detectors can be fabricated at a low cost and can operate at ambient temperatures. In this study, the surface morphology and chemical and crystal states of PbSe and its
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High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process Thin Solid Films (IF 2.1) Pub Date : 2024-03-23 Zengcai Song, Mengzhen Hu, Xinnan Zhang, Zhihua Zhu, Shijun Luo, Lei Xu
In this work, InGaSnO thin film transistors (TFTs) with high mobility (>50 cm/Vs) were prepared by a simple co-sputtering process at a low temperature of 150 ℃. In the co-sputtering process of InSnO and GaO, the composition of InGaSnO can be reasonably controlled by adjusting the sputtering power in the radio frequency plasma, which significantly affects the electrical performance and stability of
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Tin oxide thin films on Ag(111): Thickness and temperature dependent study of surface structure and electronic properties Thin Solid Films (IF 2.1) Pub Date : 2024-03-21 Suvankar Chakraborty, Krishnakumar S.R. Menon
Growth and structure of tin oxide films on Ag(111) from submonolayer to 10 monolayer equivalent thickness have been studied using low energy electron diffraction (LEED), x-ray photoemission spectroscopy (XPS) and angle-resolved photoemission spectroscopy techniques for room temperature (RT) and high temperature (HT) (573 K). For RT growth, most of the tin is oxidised to form tin oxide (SnO) as confirmed
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International conference on metallurgical coatings and thin films–ICMCTF 2022–Preface Thin Solid Films (IF 2.1) Pub Date : 2024-03-20 Esteban Broitman, Carlos A. Figueroa, Sandra E. Rodil, Juan A. Zapien, Gregory Abadias
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Fatigue fracture mechanism of sputtered AlSi alloy film by pulsating-tension cyclic loading testing Thin Solid Films (IF 2.1) Pub Date : 2024-03-16 Michiko Shindo, Daisuke Yasugi, Hiroya Saegusa, Hiroki Tsuma, Tsuyoshi Nishiwaki, Takahiro Namazu
This paper focuses on investigating the differences in fatigue fracture between sputtered aluminum silicon (AlSi) alloy and pure aluminum (Al) films by means of pulsating-tension cyclic loading tests. AlSi alloy film with 1.0 wt% (wt%) silicon (Si) and pure Al film are prepared at a substrate temperature of 450 ℃ and 260 ℃, respectively, by dc magnetron sputtering. After annealing those films at 490
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High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing Thin Solid Films (IF 2.1) Pub Date : 2024-03-14 Changhai Zhang, Xue Zhang, Bowen Zhang, Chao Yin, Yue Zhang, Yongquan Zhang, Tiandong Zhang, Yang Cui, Qingguo Chi
The lead zirconate (PZO) anti-ferroelectric thin film capacitors, known for their high power density and rapid discharge speed, have garnered significant attention for applications in energy storage. Efficient strategies to enhance energy storage performance include doping and low-temperature annealing. PZO-based films, grown on Pt/Ti/SiO/Si using the sol-gel method, undergo modification through Li
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Reconstruction of laser-induced microstructures temperature profiles Thin Solid Films (IF 2.1) Pub Date : 2024-03-11 V.I. Yusupov, V.S. Zhigarkov
Metallic microstructures are currently widely used in micro-optoelectronics, sensorics, microfluidics, and other applications. A promising direction in the creation of such microstructures is pulsed laser processing of thin metal films. To improve laser technologies and simulate ongoing processes, data on the temperature fields that arise during laser exposure are needed. The article shows that the
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Controlling the morphology and properties of electrodeposited polyaniline layer on TiO2 nanotubes Thin Solid Films (IF 2.1) Pub Date : 2024-03-08 Luana B Oliveira, Felipe LN Sousa, Marcelo Navarro, Maurício A Melo, Giovanna Machado
Polyaniline (PANI) layers were electrodeposited, as the conductive emeraldine salt phase (PANI (ES)), on the surface of titanium dioxide nanotubes (TiO NTs) to evaluate the protective and photo(electro)chemical performance. TiO NTs plates were obtained by anodization, in a two-electrode in the undivided cell. The adjustment of the electropolymerization parameters (e.g. aniline concentration, cycles
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Effect of annealing treatment of indium tin oxide thin films on film properties and transparent antenna properties Thin Solid Films (IF 2.1) Pub Date : 2024-03-08 Yoji Yasuda, Yuri Yamada, Fukuro Koshiji, Shin-ichi Kobayashi, Takayuki Uchida, Yoichi Hoshi
There is a growing demand for transparent thin film antennas to serve as access points for wireless communication that can be installed at any location without compromising visibility, while retaining the versatility of existing antennas. Although studies exist on indium tin oxide (ITO)-based transparent antennas, studies on the effect of thin-film process parameters on antenna properties are rare
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Improved corrosion resistance and interfacial conductivity of a-C/(Ti:C)/Ti nano-thin film for 316L stainless steel bipolar plates Thin Solid Films (IF 2.1) Pub Date : 2024-03-08 Luqi Chang, Xiejing Luo, Yingyu Ding, Jiuhong Zhang, Xiaoyu Gong, Yi Zhong, Jizheng Yao, Jie Song, Zhanfeng Deng, Chaofang Dong
To enhance corrosion resistance and electrical conductivity of metallic bipolar plates for proton exchange membrane fuel cells (PEMFCs), the film containing amorphous carbon (a-C) outer layer, titanium carbon compound (Ti:C) transition layer and titanium (Ti) seed layer has been deposited on the surface of 316L stainless steel (316L SS) by multi-arc ion plating method. Dense and uniform a-C/(Ti:C)/Ti
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Thermally responsive co-polymer coating for adaptive solar control Thin Solid Films (IF 2.1) Pub Date : 2024-03-06 Xiaoyan Pan, Qingquan Zhang
This paper introduces a simple, robust and inexpensive method to create a thermal responsive coating for glass. The coating is a copolymer of N‑isopropylacrylamide (NIPAAm) and acrylamide (AAm), which can switch between clear and opaque states reversibly. The switching temperature can be adjusted from 32°C to 40°C by varying the percentage of acrylamide. The coating remains stable after switching 30
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Liquid iodine sensitization for enhanced mid-infrared detection of lead selenide films Thin Solid Films (IF 2.1) Pub Date : 2024-03-06 Quanjiang Lv, Rongfan Li, Zhiyuan Jiang, Liangchao Fan, Zhi Huang, Zhenyu Huan, Mingyang Yu, Guiwu Liu, Guanjun Qiao, Junlin Liu
In pursuit of addressing the inherent challenges associated with gas partial pressure control and non-uniform diffusion of solid iodine encountered in conventional sensitization methods, this study delves into the impact of liquid sensitization on the structural and electrical properties of lead selenide (PbSe) films. The sensitization process entails iodination of PbSe films within varying concentrations
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Effect of sodium gluconate addition on anomalous codeposition of electroplated nickel-iron alloys Thin Solid Films (IF 2.1) Pub Date : 2024-03-04 Ju-Lung Ma, Hou-Jen Chen, Kai-Cheng Chung, Yung-Fu Wu, Chia-Ying Yen, Wen Jin Li, Hsin-Chih Lin
Invar nickel-iron alloy has been widely applied in the fields of electronics, sensors, communications and optics, due to its low thermal expansion coefficient, high hardness, high ductility and other characteristics according to product requirements. The application in metal stencil during the manufacturing process of active-matrix organic light-emitting diodes is mainly due to their good electrical
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Optical and structural characterization of zinc oxide thin films upon ion beam assisted smoothing Thin Solid Films (IF 2.1) Pub Date : 2024-03-04 Sebastian Henn, Gregor Dornberg, Andreas Müller, Carsten Bundesmann, Frank Frost, Chris Sturm, Marius Grundmann
Wurtzite zinc oxide (ZnO) has a preferential growth direction along the -axis of the hexagonal unit cell, which, especially in combination with underlying (amorphous) heterostructures, can lead to a high surface roughness for the ZnO layers. This poses a significant challenge to the construction of e.g. photonic waveguides or gratings. Here, we propose an efficient way for smoothing ZnO surfaces after
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Effect of sodium atom adsorption on the electronic structure of a thin gold film Thin Solid Films (IF 2.1) Pub Date : 2024-03-04 P.A. Dementev, E.V. Dementeva, M.N. Lapushkin, S.N. Timoshnev
The effect of sodium adsorption on a gold film deposited on a tungsten substrate was studied. The deposition of Na atoms onto a thin film of gold on tungsten leads to a change in the spectra of the valence band and the core levels of gold and tungsten. An analysis of the spectra showed that the sodium atoms in the surface layer are in a neutral state, and the diffusion of sodium atoms deep into the
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Effect of TiN thin films deposited by oblique angle sputter deposition on sol-gel coated TiO2 layers for photocatalytic applications Thin Solid Films (IF 2.1) Pub Date : 2024-03-02 Lazhari-Ayoub Naas, Boudjemaa Bouaouina, Fayçal Bensouici, Kamel Mokeddem, Seddik Elhak Abaidia
TiO monolayer and TiN/TiO bilayer coatings were deposited on soda-lime glass prepared by mixing two techniques, TiO was deposited by sol-gel dip-coating and TiN film was deposited by oblique angle deposition using reactive magnetron sputtering at α=45° Structural analysis showed typical peaks of TiO anatase phase and cubic (Na-Cl type) structure of TiN. Roughness value of 3 nm was obtained for the
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Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application Thin Solid Films (IF 2.1) Pub Date : 2024-02-25 Shubham Patil, Sandeep Kumar, Adityanarayan H Pandey, Swagata Bhunia, Bhaveshkumar Kamaliya, Anand Sharma, Sandip Lashkare, Rakesh G. Mote, Apurba Laha, Veeresh Deshpande, Udayan Ganguly
Silicon-on-Insulator (SOI) technology has been the center of attraction with the advancement in Radio Frequency (RF) technology and the advent of Internet-of-Things due to its low-power operation with reduced parasitic and short-channel effects. However, the state-of-the-art smart-cut method used for the SOI wafer is costly. Alternatively, the notion of using the Si channel layer on epitaxial rare-earth
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Toward improving the performance of Cu2ZnSnS4-based solar cells with Zr, W or sulfurized layers at the SnO2:F/Cu2ZnSnS4 rear interface Thin Solid Films (IF 2.1) Pub Date : 2024-02-25 Hezekiah B. Sawa, Melike Babucci, Jan Keller, Charlotte Platzer Björkman, Margaret E. Samiji, Nuru R. Mlyuka
The photovoltaic performance of CuZnSnS (CZTS)-based thin film solar cells with transparent back contacts is mainly constrained by the ohmic loss due to degradation of the back contacts at high temperatures required for the growth of the CZTS absorbers. This work has attempted to use ultrathin Zr and W interlayers at the SnO:F FTO)/CZTS interface with the purpose of improving the ohmic properties of
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Graphene oxide assisted preparation of V2O5 films for electrochromic and energy storage applications Thin Solid Films (IF 2.1) Pub Date : 2024-02-24 Aoshu Li, Yanwei Li, Jinhuan Yao, Jiqiong Jiang
A VO film is prepared by an electrochemical deposition method with the assistance of graphene oxide (GO). The surface morphology and microstructure of the film are characterized by scanning electron microscope, X-ray diffraction, Raman spectroscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy measurements. The results demonstrate that the prepared film is mainly composed of orthorhombic
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Investigating tribological properties of electrophoretically deposited graphene nanoplatelets coatings on mild steel Thin Solid Films (IF 2.1) Pub Date : 2024-02-24 Gabriele Baiocco, Erica Menna, Daniel Salvi, Nadia Ucciardello
The use of graphene-based materials to enhance the tribological properties of metal surfaces has garnered increasing interest in recent years. In fact, various studies have demonstrated that graphene-related materials, such as graphene nanoplatelets (GNPs), hold promise as solid lubricants. Electrophoretical deposition (EPD) is an interesting coating method to obtain a deposition of particles such
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Absorber texture and the efficiency of polycrystalline thin film CdTe solar cells Thin Solid Films (IF 2.1) Pub Date : 2024-02-24 Vladislav Kornienko, Ochai Oklobia, Stuart Irvine, Steve Jones, Amit Munshi, Walajabad Sampath, Ali Abbas, Kieran Curson, Stuart Robertson, Yau Yau Tse, Kurt Barth, Jake Bowers, Michael Walls
A range of microstructural changes occur during the deposition and activation of CdTe based thin film solar cells. In particular, the cadmium chloride (CdCl) activation treatment results in wholesale recrystallisation which transforms the conversion efficiency of the solar cell. One of the noticeable effects is the change of preferred orientation of the CdTe absorber. Highly orientated [111] texture
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Effects of Dy on structural, morphology, optical, and resistive switching properties of HfO2 thin films Thin Solid Films (IF 2.1) Pub Date : 2024-02-24 S. Gálvez-Barbosa, Luis A. González, G. Rosas
This paper studies the effect of Dy on the structure, morphology, and optical properties of HfO thin films deposited on fused silica substrates and the optical transparency and resistive switching (RS) behavior of the thin films as an active insulator layer in Ag/active insulator layer/ITO/glass memories. Thin films were deposited by spin-coating using a precursor solution obtained by the Pechini-type
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Corrosion resistance and conductivity behavior of Cr-Al-N MAX phase coatings prepared by magnetron sputtering technology Thin Solid Films (IF 2.1) Pub Date : 2024-02-23 Y.L. Su, W.H. Kao, J.H. Horng, H.C. Hsueh, Y.C. Cian, T.C. Hsieh
Chromium aluminum nitride (CrAlN) coatings containing CrAlN phase were prepared by unbalanced magnetron sputtering followed by annealing at 1000 °C. The crystal structures, X-ray diffraction patterns, and selected area electron diffraction patterns of the CrAlN phase were modeled using computer software and compared with experimental observations. A good agreement was found between the two sets of
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Chemical characteristics via quantitative photoelectron analysis of chemical-solution-deposited yttrium oxide thin films for metal-insulator-metal capacitor applications Thin Solid Films (IF 2.1) Pub Date : 2024-02-22 M.A. Ruiz-Molina, G. Suárez-Campos, D. Cabrera-German, D. Berman-Mendoza, H. Hu, M. Sotelo-Lerma
A cost-effective chemical bath deposition coupled with an annealing methodology is presented for obtaining yttrium oxide (YO) thin films. The resultant thin films are homogeneous, free of pinholes, and show a relatively low surface roughness. The detailed characterization of the as-deposited thin film and the determination of optical, structural, and chemical characteristics of the films upon thermal
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Effects of Ti doping on the magnetic and microstructure properties of the lower magnetic anisotropy CoCrPtRu-oxides layer in a perpendicular recording media Thin Solid Films (IF 2.1) Pub Date : 2024-02-22 Jai-Lin Tsai, Ting-Cheng Chang, Li-Xiang Liu, Yi-Chen Chen, He-Ting Tsai
Areal density capacity is constrained by linear and track density, and the recent advancements in magnetic layer structures have led to the development of segmented media. This configuration incorporates a graded magnetic anisotropy layer introduced through a non-magnetic exchange control layer. Optimizing this structural design yielded improvements in the signal-to-noise ratio (SNR) and an elevation
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Atomic layer deposited Fe-sulfide layers with pyrrhotite structure controlled by the deposition temperature Thin Solid Films (IF 2.1) Pub Date : 2024-02-20 Zsófia Baji, Béla Pécz, Zsolt Fogarassy, Zoltán Szabó, Ildikó Cora
Atomic layer deposition was used to grow epitaxial iron sulfide layers on α-AlO substrates. According to the transmission electron microscopic measurements, these Fe-sulfide films had 1C pyrrhotite structure (FeS). In the case of pyrrhotite materials, both the magnetic and electric properties depend significantly on their iron content and on the ordering of iron vacancies. By tuning the parameters
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Effect of growth rate on structural, magnetic and spin dynamic properties of Co2FeAl thin films Thin Solid Films (IF 2.1) Pub Date : 2024-02-19 Rohiteswar Mondal, M S Devapriya, Jhantu Pradhan, Arabinda Haldar, Chandrasekhar Murapaka
The growth of high-quality Heusler alloy thin films with low damping is essential for designing low-power spintronic devices. Here, we report a systematic investigation of the structural, magnetic, and spin dynamic properties of Co-based (Cobalt, Iron, Aluminum) Heusler alloy thin films via growth rate variation in sputtering. We found close stoichiometry comparable with the sputtering target towards
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Enhanced energy-storage and magnetoelectric properties of Ba0.95La0.05Zr0.4Ti0.6O3/CoFe2O4 multilayer thin films Thin Solid Films (IF 2.1) Pub Date : 2024-02-16 Minh D. Nguyen
Multifunctional thin films and devices have gained much interest in both scientific and industrial research for futuristic multifunctional micro- and nano-device applications. Here, we report the development of a multi-layer structure based on relaxor-ferroelectric BaLaZrTiO (BLZT) and ferrimagnetic CoFeO (CFO) ([BLZT/CFO]/BLZT or BLZT/CFO) thin-films on Si substrates for enhanced energy-storage density
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Influence of thermal treatment and Fe doping on ZnO films by ultrasonic spray pyrolysis Thin Solid Films (IF 2.1) Pub Date : 2024-02-16 Meryem Polat Gonullu, Damla Dilara Cakil, Cemil Cetinkaya
Zinc Oxide and Fe-doped ZnO films (1, 2, 3 %) were deposited onto glass substrates by ultrasonic spray pyrolysis. Then, the films were thermally treated at 500 °C for 2 h. Findings revealed that both Fe doping and thermal treatment changed film properties. Films presented hexagonal wurtzite structures without any secondary phases for all films. The preferential orientation (002) changed to dominant
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Enhanced tin-based perovskite solar cells with acrylamide-doped hole-transport layer Thin Solid Films (IF 2.1) Pub Date : 2024-02-15 Wenjin Zeng, Yuting Shi, Chaochao Yuan, Enzhi Li, Jiahao Li, Qiaoli Niu, Ruidong Xia, Yong Min, Xinwen Peng
The quality of the hole transport layer (HTL) is crucial for the overall efficiency of the perovskite solar cells. Although poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT:PSS) has been widely used as HTL for the perovskite solar cells, there is still room for further improvement of PEDOT:PSS by optimizing its energy level matching and the hole transfer efficiency. Based on the
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The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys Thin Solid Films (IF 2.1) Pub Date : 2024-02-10 M.E. Twigg, S. Tomasulo, M.A. Stevens, N.A. Mahadik, N.A. Kotulak, M.K. Yakes
Cross-sectional transmission electron microscopy (XTEM) has been used to analyze phase separation in the III-V semiconductor alloy InGaAs grown by molecular beam epitaxy (MBE) on (001) InP substrates with a 2 ° offcut, as well as InGaP grown upon on-axis (001) GaAs. Both films were deposited using a time of 20 seconds for each substrate rotation, with a deposition rate of 0.278 nm/s. Phase separation
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Electrochemical profile of non-lithium, non-sodium telluride-based electrodes Thin Solid Films (IF 2.1) Pub Date : 2024-02-08 K.P Lakshmi, B Pruthvija
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Carbonaceous-TiO2 composite photocatalysts through reactive direct current magnetron sputtering on powdered graphene for environmental applications Thin Solid Films (IF 2.1) Pub Date : 2024-02-07 Paula R. Dutra, Camila C. Amorim, Pedro L. Gastelois, Matthieu Grao, Marina Ratova, Adelina P. Santos, Peter Kelly
An efficient photocatalytic composite material was produced by coating graphene powder with TiO using reactive pulsed direct-current magnetron sputtering. High-quality graphene powder with a thickness consisting of 6–10 layers was obtained by liquid-phase exfoliation of natural graphite. The process variables included the working pressure (0.7, 1.2, and 1.5 Pa), coating time (1, 2, 4, and 8 h), and
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Structural, optical, morphological, and supercapacitive studies of electrophoretically deposited nanostructured Mn3O4 thin films Thin Solid Films (IF 2.1) Pub Date : 2024-02-07 Tanaji S. Patil, S.M. Nikam, V.P. Kothavale, R.S. Kamble, R.B. Patil, M.V. Takale, S.A. Gangawane
Herein, the trimanganese tetraoxide (MnO) thin films were deposited by the simple electrophoretic deposition technique using MnSO precursor of different molarities (0.05, 0.075, 0.1, and 0.125 M). The effect of different molar concentrations of MnSO precursor on structure, morphology, optical properties, and supercapacitive performance has been examined. The deposited thin films were characterized
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Study of AlScN thin film deposition on large size silicon wafer Thin Solid Films (IF 2.1) Pub Date : 2024-02-07 Tengda Zhao, Kai Guo
This work prepared AlSc2N thin films (AlScN) with a thickness of 1 μm on Φ = 200 mm (100) bare silicon wafers and studied the effects of sputtering power, substrate bias power and gas flow on the quality of films. The microstructure, crystal orientation and piezoelectric response of the AlScN thin films were comprehensively investigated. The prepared films exhibit highly c-axis texture and smooth surface
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Schottky conduction mechanism in plasma polymerized N-benzylaniline thin films Thin Solid Films (IF 2.1) Pub Date : 2024-02-05 Rani Nasrin, Mohammad Jellur Rahman, A.H. Bhuiyan
Highly feasible plasma polymerized N-benzylaniline (PPNBA) thin films have been synthesized onto glass substrates by a parallel plate capacitively coupled reactor at 50 Hz. The surface morphology of the PPNBA thin films is mosaic-like and formed by uniform distribution of unequal nanosized clusters over the smooth background of the film surface. The current density-voltage (‒) characteristics of the
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Stress mechanism analysis by finite element method for different dielectric films deposited with ion-beam assisted deposition on flexible substrates Thin Solid Films (IF 2.1) Pub Date : 2024-02-04 Hsi-Chao Chen, Yu-Ru Lu, Chun-Hao Chang
In this study, an investigation was made into the optical and stress properties of four dielectric films: silicon dioxide (SiO), titanium dioxide (TiO), tantalum pentoxide (TaO) and niobium pentoxide (NbO). This was because they are commonly used in the optoelectronic and semiconductor devices. The classification of these stress properties includes tensor & compressive, thermal & intrinsic, and principal
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Low-temperature growth of BaZrO3 and Ba(Zr,Y)O3− thin films via spray pyrolysis deposition Thin Solid Films (IF 2.1) Pub Date : 2024-02-04 Issei Suzuki, Hiromasa Tawarayama, Masatoshi Majima, Takahisa Omata
BaZrYO (BZY) is a promising electrolyte for proton-conducting oxide fuel cells. However, the fabrication of BZY requires high-temperature processing (> ∼1700 °C) for densification, which makes the fabrication process expensive and may lead to degradation in fuel cell performance due to atomic diffusion at the electrode interface. To address these issues, this study focused on the deposition of BaZrO
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Thin film deposition of undoped and Ni-doped cobalt ferrite on MgO (110) substrates using pulsed laser deposition technique Thin Solid Films (IF 2.1) Pub Date : 2024-01-30 Gulzar Ahmad Lone, Nazima Nazir, Mohammad Balal, Mohd Ikram
The thin film samples of pristine and Ni-doped Cobalt ferrite(CFO) are deposited on MgO(110) substrates through pulsed laser deposition technique. The recorded X-ray diffraction scans of the samples confirms the thin film deposition of the said material on the given substrate. From the Atomic Force Microscopy studies, the surface roughness of CoFe1.7Ni0.3O4 thin film is found to be 0.62 nm, which is
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Crystalline domain orientation of a two-dimensional WS2 film deposited on a (0001) sapphire substrate Thin Solid Films (IF 2.1) Pub Date : 2024-02-03 Fong-Zhi Chen, Wei-Lin Wang, Wei-Chun Chen, Hung-Pin Chen, Kun-An Chiu, Yu-Wei Lin, Yen-Teng Ho, Hua-Lin Chen
A two-dimensional (2D) tungsten disulfide (WS) film deposited by chemical vapor deposition on (0001) sapphire substrate is investigated by optical and transmission electron microscopy (TEM), Raman and photoluminescence (PL) spectroscopy, and in-plane X-ray diffraction (IP-XRD). The Raman and PL spectra confirm the 2D characteristics of WS film. The layered structure of 2D WS film is revealed in the
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Weak antilocalization and gigahertz acoustic phonons in Bi2Se2Te and Bi3Se2Te-dominated thin films grown using pulsed laser deposition Thin Solid Films (IF 2.1) Pub Date : 2024-01-28 Phuoc Huu Le, Le Thi Cam Tuyen, Nguyen Nhat Quyen, Chih-Wei Luo, Jiunn-Yuan Lin, Jihperng Leu
We reported a comparative study on the material–magnetotransport properties of topological insulator Bi2Se2Te and a ternary Bi3Se2Te-dominated thin films. The Bi-Se-Te thin films were grown on c-plane sapphire using pulsed laser deposition at various substrate temperatures (TS) of 180 – 300 °C. The highly c-axis-oriented films exhibited the Bi2Se2Te phase (at TS = 180, 220 °C), and a mixed phase of
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Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation Thin Solid Films (IF 2.1) Pub Date : 2024-01-28 Jingjing Chen, Kebei Chen, Xujun Su, Mutong Niu, Qiqi Wang, Ke Xu
In this work, the structure and slip systems of dislocations induced by nano-indentation in high quality c-plane (0001) and m-plane (11¯00) Aluminum nitride (AlN) single crystals have been systemically investigated. Dislocations with burgers vector of b = 1/3<112¯0> and b = 1/3<112¯3> were introduced on the (0001) basal planes and {112¯2} pyramidal planes in c-plane AlN, respectively. The similar investigation
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Investigation of plasma process in deposition of cupric oxide film produced by radio frequency magnetron sputtering Thin Solid Films (IF 2.1) Pub Date : 2024-02-02 Khadijeh Farhadian-Azizi, Majid Abbasi, Marzieh Abbasi-Firouzjah, Mojtaba Hashemzadeh
The plasma process in the deposition of cupric oxide (CuO) film was investigated. The films were synthesized by balanced radio frequency magnetron sputtering. The Effect of substrate temperature, working pressure, and bias voltage on the film properties and their relations to the plasma factors was studied. These parameters affect the kinetic energy and flux of different plasma species, especially
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Thorough investigation of the optical, electrical and thermal properties of Cu3Se2 thin film deposited by chemical bath deposition Thin Solid Films (IF 2.1) Pub Date : 2024-02-02 Sefali R. Patel, Sunil H. Chaki, Sandip V. Bhatt, Milind P. Deshpande, Saurabh S. Soni, Sanjay N. Bariya
Recently, metal chalcogenide thin films have gained utmost significance across various industries attributed to their exceptional versatility and efficiency in advancing future electronics, optoelectronics and energy conversion devices. In this work, the formation of a copper selenide (CuSe) thin film is accomplished through the utilization of chemical bath deposition approach. The energy dispersive
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Scanning tunneling microscopy investigation of self-assembly behavior of C60 on an intrinsically patterned Ag5Se2 surface Thin Solid Films (IF 2.1) Pub Date : 2024-02-01 Shicheng Li, Yong Zhang, Gefei Niu, Li Sun, Jinming Cai, Jianchen Lu
Extensive research has been conducted on the use of surface nanotemplates, whether artificially or naturally patterned, to regulate the self-assembly processes on surfaces. It has become clear that in order to gain a better understanding and control over the formation of well-ordered two-dimensional nanostructure arrays, detailed investigations into the nucleation and growth of adsorbates (molecules
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Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy Thin Solid Films (IF 2.1) Pub Date : 2024-02-01 Timur Malin, Yan Maidebura, Vladimir Mansurov, Tatyana Gavrilova, Anton Gutakovsky, Vladimir Vdovin, Sergey Ponomarev, Ivan Loshkarev, Igor Osinnykh, Vladimir Volodin, Denis Milakhin, Konstantin Zhuravlev
It is shown that the nitridation conditions of the silicon substrate are not less important than the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown by ammonia-assisted molecular beam epitaxy (NH-MBE). Furthermore, the morphology of the GaN layers is independent of the buffer layer structure, but is determined by the GaN growth conditions. Nevertheless, the
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Nanosecond-laser annealing of zinc oxide thin-films: The effect of the laser wavelength and fluence Thin Solid Films (IF 2.1) Pub Date : 2024-01-26 S. Jain, W. Medlin, S. Uprety, T. Isaacs-Smith, T. Olsson, J. Davis, S. Burrows, S. Chumley, M. Park, G.M. Laurent
Zinc oxide (ZnO) thin-films were grown via radio-frequency sputtering, and subsequently irradiated with a nanosecond laser at distinct wavelengths (266, 355, 532, and 1064 nm) and fluences (20–3000 mJ/cm2). The structural, chemical, and topological properties of the laser-irradiated films were then characterized using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and scanning
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High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates. Thin Solid Films (IF 2.1) Pub Date : 2024-01-26 Ioanna Bakaimi, Brian E. Hayden, Colin J. Mitchell, Goran Z. Mashanovich
The integration of lead zirconate titanate (Pb(ZrxTi1-x)O3) (PZT) compounds on Si substrates with a smooth surface would provide a key technology for silicon photonic devices. The quality of the deposited thin film is critical in order to integrate Pb(ZrxTi1-x)O3 on Si substrates for applications such as pyroelectric mid-infrared detectors or optical modulators. Here, we have applied physical vapour
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Improvement in the upconversion efficiency of an alternating multilayer structure based on 9,10-bis(4-methylphenyl) anthracene and platinum octaethylporphyrin vacuum deposited on an in-plane oriented polythiophene film Thin Solid Films (IF 2.1) Pub Date : 2024-01-24 Toshiko Mizokuro, Yoshihiro Kikkawa, Hirokazu Ohsawa, Kenji Kobayashi, Kenji Kamada
Alternating layers of 9,10-bis(4-methylphenyl) anthracene (diMe-DPA) and platinum octaethylporphyrin were fabricated via vacuum deposition on an in-plane-oriented polythiophene (PT) film. The multilayer film showed higher upconversion (UC) quantum efficiency than bilayer films with similar composition and total thickness. The UC quantum efficiency of the multilayer structure deposited on the oriented
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Q-carbon as an emergent surface coating material for antimicrobial applications Thin Solid Films (IF 2.1) Pub Date : 2024-01-24 Naveen Joshi, Shubhangi Shukla, Nayna Khosla, Lyndsi Vanderwal, Shane Stafslien, Jagdish Narayan, Roger J. Narayan
Q-carbon, an allotrope of carbon, exhibits exciting functional properties and robust mechanical strength. We propose that the surface of the Q-carbon can be functionalized by doping it with silicon to enhance its performance as a potential implant material. As such, a coating of silicon-doped Q-carbon (Si-Q-carbon) is shown to minimize the formation of biofilm, thus reducing the risk of microbial infection
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Enhanced electrophoretic deposition and heat treatment study of MgB2 superconducting coatings from iodine-stabilized colloidal precursors Thin Solid Films (IF 2.1) Pub Date : 2024-01-23 Xyrus A. Galapia, Maricar M. Rosete, Roland V. Sarmago
When it comes to electrophoretic deposition, suspension stability is the key parameter that determines the outcome of the process, and influences the quality of the green and subsequent sintered products. As such, we utilized stable colloidal precursors to improve the electrophoretic deposition of superconducting MgB2 coatings on copper. It was found that the stability of MgB2 particles in acetone
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An improvement of thermoelectric properties for Mg3Bi2/Mg2Sn nanocomposite films by the phase interface Thin Solid Films (IF 2.1) Pub Date : 2024-01-17 Xinghai Han, Guihong Song, Shuang Yang, Yusheng Wu, Junhua You
Mg3Bi2/Mg2Sn nanocomposite films were prepared on single Si substrate using high pure metal Mg, Mg3Bi2 and Mg2Sn target by alternately sputtering. The phase composition of the deposited Mg3Bi2/Mg2Sn films was analyzed by X-ray diffraction patterns. The surface and cross-sectional morphology of the deposited Mg3Bi2/Mg2Sn films was observed by scanning electron microscope. The content and distribution
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Optical transmission and photoconductivity of chemical bath-deposited CdS thin films for optoelectronic applications Thin Solid Films (IF 2.1) Pub Date : 2024-01-22 M.A.K.L. Dissanayake, K. Paramanathan, G.K.R. Senadeera, C.A. Thotawattage, K. Balashangar, P. Ravirajan, B.S. Dassanayake
This paper presents a comprehensive study of the optical transmission, photoconductivity, and morphology of CdS thin films deposited via the chemical bath deposition (CBD) method. The films deposited for 60 min exhibit an optical energy band gap value of 2.42 eV and the highest optical transmission of 75 % in the wavelength range of 500–900 nm. For these films, the transmission electron microscopy
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Structural and optical properties of silicon oxycarbide thin films using silane based precursors via sol-gel process Thin Solid Films (IF 2.1) Pub Date : 2024-01-20 Soma Hansda, Dipika Sarkar, Sukanya Kundu, Ajitesh Kar, Subhankar Bera, Sanjiban Das, Dipayan Sanyal, Milan K. Naskar
Silicon oxycarbide (SiCxOy) is a candidate material for white luminescence. This work investigates the formation of SiCxOy thin film coating by sol-gel route using various silanes namely, methyltrimethoxy silane (MTMS) with or without using tetraethyl orthosilicate, vinyltrimethoxysilane and polydimethyl siloxane, followed by calcination at 1000 °C/1 h under Ar atmosphere. The structural and optical