Germanium diselenide (GeSe2) nanobelts are synthesized by atmospheric-pressure chemical vapor deposition under low temperature by using Se and Ge powders as precursor materials in a quartz tube furnace with double heating zones. The GeSe2 nanobelts thus prepared exhibit growth directionality. Unidirectional nanobelt clusters are tightly spaced and shaped as rectangular nanobelt arrays. Additionally, the thickness of the prepared GeSe2 material is less than 5 nm, and the area of a single array can attain 0.96 mm2. Our experimental results show that hydrogen directly affects the growth of GeSe2. First-principles calculations reveal the electronic properties and in-plane anisotropic optical absorption of the few-layer two-dimensional GeSe2 material. Optical absorbance measurements of GeSe2 nanobelt arrays reveal high ultraviolet absorbance of GeSe2 (200–400 nm). Photodetectors based on GeSe2 nanobelts are p-type, with high responsivity, superior detectivity, and a fast response time. These results show that GeSe2 is an excellent ultraviolet photoelectric material with potential photoelectronic applications.

中文翻译：

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定向二维GeSe2纳米带阵列的可控制备及光电性能

二硒化锗 (GeSe2) 纳米带是在具有双加热区的石英管炉中使用 Se 和 Ge 粉末作为前体材料，通过常压化学气相沉积在低温下合成的。由此制备的 GeSe2 纳米带表现出生长方向性。单向纳米带簇间隔紧密，形状为矩形纳米带阵列。此外，所制备的GeSe2材料厚度小于5nm，单阵列面积可达0.96mm2。我们的实验结果表明，氢气直接影响 GeSe2 的生长。第一性原理计算揭示了少层二维 GeSe2 材料的电子特性和面内各向异性光吸收。GeSe2 纳米带阵列的光吸收测量揭示了 GeSe2 (200–400 nm) 的高紫外吸收。基于 GeSe2 纳米带的光电探测器为 p 型，具有高响应度、卓越的探测灵敏度和快速响应时间。这些结果表明GeSe2是一种优良的紫外光电材料，具有潜在的光电应用。