We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.

中文翻译：

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β-(AlxGa1−x)2O3 肖特基势垒二极管中的低频噪声

我们报告了 β-(AlxGa1−x)2O3 肖特基势垒二极管中的低频电子噪声。噪声频谱密度揭示了 1/f 依赖性，这是闪烁噪声的特征，在中间电流水平（f 是频率）处叠加了洛伦兹凸起。在 1 A/cm2 电流密度下，此类二极管中的归一化噪声频谱密度确定为 10−12 cm2/Hz（f = 10 Hz）的数量级。在中间电流状态下，我们观察到随机电报信号噪声，与噪声频谱中洛伦兹凸起的出现相关。随机电报信号噪声归因于肖特基势垒附近的缺陷。这些缺陷会影响局部电场和势垒，并相应地影响电流。