A special wake-up effect from antiferroelectric-like to ferroelectric (AFE-FE) characteristics in HfxZr1−xO2 thin films has been discussed intensively in terms of endurance performance enhancement. However, its physical origin and general impact on endurance remain unclear. In this work, the influence of various process parameters on the AFE-FE wake-up effect as well as on endurance performance and the material changes during AFE-FE wake-up are systematically studied. It is found that various parameters induce the AFE-FE wake-up effect and enhance endurance performance in the same way with enhancing tetragonal phase formation in HfxZr1−xO2 films, and the cycles of wake-up are universally associated with those of total endurance. In addition, via synchrotron-based grazing incidence x-ray diffraction, a tetragonal-orthorhombic-monoclinic phase transition is observed during AFE-FE wake-up. On the basis of these results, a correlation among crystalline composition, the AFE-FE wake-up effect, and the endurance performance of HfxZr1−xO2 thin films is established. This provides a clear guideline to a viable solution for the high endurance of HfxZr1−xO2 FE memory devices via crystal phase engineering.

中文翻译：

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铁电 HfxZr1−xO2 薄膜晶相组成、唤醒效应与耐久性能的相关性

HfxZr1−xO2 薄膜中从类反铁电到铁电 (AFE-FE) 特性的特殊唤醒效应已在耐久性能增强方面得到深入讨论。然而，它的物理起源和对耐力的一般影响仍不清楚。在这项工作中，系统地研究了各种工艺参数对 AFE-FE 唤醒效果以及续航性能的影响和 AFE-FE 唤醒过程中的材料变化。发现各种参数诱导 AFE-FE 唤醒效应并以与增强 HfxZr1−xO2 薄膜中四方相形成相同的方式增强耐久性能，并且唤醒周期普遍与总耐久性相关。此外，通过基于同步加速器的掠入射 X 射线衍射，在 AFE-FE 唤醒期间观察到四方-正交-单斜相变。基于这些结果，建立了晶体组成、AFE-FE 唤醒效应和 HfxZr1−xO2 薄膜的耐久性能之间的相关性。这为通过晶相工程实现 HfxZr1−xO2 FE 存储器件的高耐久性的可行解决方案提供了明确的指导。