In this paper, a Pt/Al₂O₃/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) sensor was fabricated for sensing hydrogen (H₂) gas and compared to a more conventional Pt-HEMT sensor. The drain-source current (I_ds) versus gate-source voltage (V_gs) property (transfer curve) and hydrogen detection characteristics in synthetic air ambient between the HEMT sensor and MIS-HEMT sensor were investigated and compared. It was observed that the MIS-HEMT sensor had a relatively higher resolution in the 100–3000 ppm range than the resolution from 10 to 100 ppm, and a better sensing response for 10 ppm of H₂ at 200 ℃ and 225 ℃ using the first-derivative method, which is based on the drain current derivative with respect to time (dI_ds/dt). When using the real-time method, which is based on the I_ds versus time, the measured sensing signal response (recovery) times of the MIS-HEMT with the Al₂O₃ gate insulator layer reduced to 36 (120) s in comparison to the HEMT sensor values of 44 (175) s. In terms of the dI_ds/dt method, the response (recovery) time was improved from 4 (2) s to 2 (2) s by using the MIS-HEMT structure.

在本文中，制造了用于感测氢 (H _{2 ) 气体的 Pt/Al 2} O ₃ /AlGaN/GaN 金属-绝缘体-半导体高电子迁移率晶体管 (MIS-HEMT) 传感器，并与更传统的 Pt-HEMT 传感器进行了比较. 研究并比较了 HEMT 传感器和 MIS-HEMT 传感器在合成空气环境中的漏源电流 ( I _ds ) 与栅源电压 ( V _{gs ) 的关系（传递曲线）和氢检测特性。}据观察，MIS-HEMT 传感器在 100-3000 ppm 范围内的分辨率比 10 到 100 ppm 范围内的分辨率相对更高，并且对 10 ppm 的 H 2 具有更好的传感_响应在 200 ℃ 和 225 ℃ 下使用一阶导数方法，该方法基于漏极电流对时间的导数 ( dI _ds / dt )。当使用基于I _ds与时间的实时方法时，具有 Al ₂ O ₃栅极绝缘层的 MIS-HEMT 的测量传感信号响应（恢复）时间相比之下减少到 36（120）秒到 44 (175) s 的 HEMT 传感器值。就dI _ds /dt方法而言，通过使用 MIS-HEMT 结构，响应（恢复）时间从 4 (2) s 提高到 2 (2) s。