Depositing high-quality VO₂ thin films on a large area has been challenging till date. While magnetron sputtering is widely used for this type of deposition, it faces serious reproducibility issues for VO₂ films due to target poisoning. In this work, we present an improved technique called sputtering oxidation coupling (SOC) using VN as intermediate material. VN films are first deposited on quartz by magnetron sputtering. In a second step, a post-annealing process in oxygen is carried out to obtain VO₂. For an annealing temperature of 470 °C, 0.5 h of oxidation under an oxygen pressure of 70 mTorr yields VO₂ films with the best performance in terms of transition properties. While the resistivity contrast has a magnitude of 2.9, the transmittance contrast is 69.3%. This is comparable to VO₂ films produced by Pulsed Laser Deposition (PLD), which is well recognized for its capability to provide high-quality VO₂ thin films. Furthermore, the lowest possible temperature for achieving VO₂ from VN with an acceptable electrical transition contrast (2.5) is found to be 400 °C, which makes the proposed method promising for growing VO₂ films directly on heat-sensitive polymer substrates.

迄今为止，在大面积上沉积高质量的 VO ₂薄膜一直具有挑战性。虽然磁控溅射广泛用于此类沉积，但由于靶材中毒，它面临严重的 VO _{2薄膜再现性问题。}在这项工作中，我们提出了一种改进的技术，称为溅射氧化耦合 (SOC)，使用 VN 作为中间材料。VN 薄膜首先通过磁控溅射沉积在石英上。在第二步中，进行氧气中的后退火工艺以获得VO ₂。对于 470 °C 的退火温度，在 70 mTorr 的氧气压力下氧化 0.5 小时会产生 VO ₂在过渡特性方面具有最佳性能的薄膜。虽然电阻率对比度的幅度为 2.9，但透射率对比度为 69.3%。_{这与通过脉冲激光沉积 (PLD) 生产的 VO 2}薄膜相当，PLD 因其提供高质量 VO ₂薄膜的能力而广为人知。_{此外，发现从具有可接受的电转变对比度 (2.5) 的 VN 获得 VO 2 的}最低可能温度为 400 °C，这使得所提出的方法有望在热敏聚合物基板上直接生长 VO _2薄膜。