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Toward Nonepitaxial Laser Diodes
Chemical Reviews ( IF 62.1 ) Pub Date : 2023-05-23 , DOI: 10.1021/acs.chemrev.2c00721
William B Gunnarsson 1 , Kwangdong Roh 2 , Lianfeng Zhao 3 , John P Murphy 4 , Alex J Grede 4 , Noel C Giebink 4 , Barry P Rand 1, 5
Affiliation  

Thin-film organic, colloidal quantum dot, and metal halide perovskite semiconductors are all being pursued in the quest for a wavelength-tunable diode laser technology that does not require epitaxial growth on a traditional semiconductor substrate. Despite promising demonstrations of efficient light-emitting diodes and low-threshold optically pumped lasing in each case, there are still fundamental and practical barriers that must be overcome to reliably achieve injection lasing. This review outlines the historical development and recent advances of each material system on the path to a diode laser. Common challenges in resonator design, electrical injection, and heat dissipation are highlighted, as well as the different optical gain physics that make each system unique. The evidence to date suggests that continued progress for organic and colloidal quantum dot laser diodes will likely hinge on the development of new materials or indirect pumping schemes, while improvements in device architecture and film processing are most critical for perovskite lasers. In all cases, systematic progress will require methods that can quantify how close new devices get with respect to their electrical lasing thresholds. We conclude by discussing the current status of nonepitaxial laser diodes in the historical context of their epitaxial counterparts, which suggests that there is reason to be optimistic for the future.

中文翻译:

走向非外延激光二极管

薄膜有机、胶体量子点和金属卤化物钙钛矿半导体都在寻求不需要在传统半导体衬底上外延生长的波长可调谐二极管激光器技术。尽管在每种情况下都展示了高效发光二极管和低阈值光泵激激光,但仍然存在必须克服的基本和实际障碍才能可靠地实现注入激光。这篇综述概述了二极管激光器道路上每种材料系统的历史发展和最新进展。重点介绍了谐振器设计、电注入和散热方面的常见挑战,以及使每个系统独一无二的不同光学增益物理原理。迄今为止的证据表明,有机和胶体量子点激光二极管的持续进步可能取决于新材料或间接泵浦方案的开发,而器件架构和薄膜加工的改进对于钙钛矿激光器来说最为关键。在所有情况下,系统性进展都需要能够量化新设备与其电激光阈值的接近程度的方法。最后,我们在外延激光二极管的历史背景下讨论非外延激光二极管的现状,这表明我们有理由对未来感到乐观。在所有情况下,系统性进展都需要能够量化新设备与其电激光阈值的接近程度的方法。最后,我们在外延激光二极管的历史背景下讨论非外延激光二极管的现状,这表明我们有理由对未来感到乐观。在所有情况下,系统性进展都需要能够量化新设备与其电激光阈值的接近程度的方法。最后,我们在外延激光二极管的历史背景下讨论非外延激光二极管的现状,这表明我们有理由对未来感到乐观。
更新日期:2023-05-23
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