The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors.

基于单层 (ML) 过渡金属二硫化物 (TMD) 的正常/铁磁/正常 (NFN) 结构，研究了压电电子学谷晶体管的自旋和谷传输特性。基于压电效应，拉比频率高达4200 MHz，比ZnO/CdO量子阱器件高约1000倍。应变诱导的强极化可以控制压电光电晶体管中自旋和谷传输的特性。强极化可以应用于谷量子比特的调制。从理论上计算了自旋和谷电导以及自旋和谷极化率。强极化可应用于谷量子位的操纵，为基于压电电子谷晶体管的量子计算应用开辟了新途径。