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408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector
Photonics Research ( IF 7.6 ) Pub Date : 2023-05-16
Xiao Hu, Dingyi Wu, Ye Liu, Daigao Chen, Lei Wang, Xi Xiao, and Shaohua Yu

Based on the 90 nm silicon photonics commercial foundry, sidewall-doped germanium–silicon photodetectors (PDs) are designed and fabricated. The large designed overlap between the optical field and electric field achieves high responsivity while retaining high-speed performance. Even including the loss due to optical fiber coupling, the PD demonstrates an external responsivity greater than 0.55 A/W for transverse magnetic (TM) polarization and 0.65 A/W for transverse electric (TE) polarization at 1530 nm. A flat responsivity spectrum of >0.5 A/W is achieved up to 1580 nm for both polarizations. Their internal responsivities can exceed 1 A/W in the C+L optical communication bands. Furthermore, with the aid of a 200 mm wafer-level test and analysis, the overall PDs of 26 reticles have a 3 dB optoelectrical bandwidth >50 GHz and a dark current <10 nA at a 3 V bias voltage. Finally, the eye diagram performances under TE and TM polarizations, various modulation formats, and different input wavelengths are comprehensively investigated. The clear open electrical eye diagrams up to 120, 130, 140, and 150 Gbit/s nonreturn-to-zero are experimentally attained at a photocurrent of 1 mA. To the best of our knowledge, this is the first time that single-lane direct detection of record-high-speed 200, 224, 256, and 290 Gbit/s four-level pulse amplitude modulation (PAM) and 300, 336, 384, and 408 Gbit/s eight-level PAM optical signals has been experimentally achieved.

中文翻译:

408 Gbit/s PAM-8 侧壁掺杂锗硅光电探测器

基于 90 nm 硅光子商业代工厂,设计并制造了侧壁掺杂的锗-硅光电探测器 (PD)。光场和电场之间的大设计重叠在保持高速性能的同时实现了高响应度。即使包括由于光纤耦合引起的损耗,PD 在 1530 nm 处的横向磁 (TM) 偏振的外部响应度大于 0.55 A/W,横向电 (TE) 偏振的外部响应度大于 0.65 A/W。对于两种偏振,均实现了高达 1580 nm 的平坦响应率光谱> 0.5 A/W 。 它们的内部响应在C + L中可以超过 1 A/W光通信频段。此外,借助 200 mm 晶圆级测试和分析,26 个分划板的整体 PD 在3 V下具有 3 dB 光电带宽> 50 GHz 和暗电流< 10 nA 偏压。最后,全面研究了 TE 和 TM 偏振、各种调制格式和不同输入波长下的眼图性能。高达 120、130、140 和 150 Gbit/s 不归零的清晰开放电眼图是在 1 mA 的光电流下通过实验获得的。据我们所知,这是第一次单通道直接检测记录高速 200、224、256 和 290 Gbit/s 四级脉冲幅度调制 (PAM) 和 300、336、384 , 408 Gbit/s 八级 PAM 光信号已通过实验实现。
更新日期:2023-05-17
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