Hysteretic switching of domain states is a salient characteristic of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a type of ferroic order that features structural rotations, but control over state switching remains elusive due to its invariance under both time reversal and spatial inversion. Here we demonstrate electrical switching of ferro-rotational domain states in the charge-density-wave phases of nanometre-thick 1T-TaS₂ crystals. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, which is realized in a simple two-terminal configuration using a volt-scale bias. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable and non-volatile isothermal state switching at room temperature. These results offer a route to the manipulation of ferro-rotational order and its nanoelectronic applications.

磁畴状态的磁滞切换是所有铁质材料的显着特征，也是其多功能应用的基础。铁旋转序是一种以结构旋转为特征的铁序，但由于其在时间反转和空间反转下的不变性，对状态切换的控制仍然难以捉摸。_{在这里，我们演示了纳米厚 1T-TaS 2}晶体的电荷密度波相中铁旋转域状态的电切换。在外部电场下从高对称相冷却到铁旋转相会引起畴态切换和畴壁形成，这是使用伏级偏置在简单的两端配置中实现的。尽管由于对称失配，电场不与有序耦合，但它驱动畴壁传播，从而在室温下产生可逆、持久且非易失性的等温状态转换。这些结果为铁旋转有序性的操纵及其纳米电子应用提供了一条途径。