Topologically protected magnetic textures are promising candidates for information carriers in future memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. These textures—nanoscale whirls in the magnetic order—include skyrmions, half-skyrmions (merons) and their antiparticles. Antiferromagnets have been shown to host versions of these textures that have high potential for terahertz dynamics, deflection-free motion and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin-film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The merons and antimerons are localized on 180° domain walls, and move in the direction of the current pulses. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high-density, high-speed magnetic memory devices.

拓扑保护的磁性纹理是未来存储设备中信息载体的有希望的候选者，因为它们可以利用电流感应自旋扭矩以非常高的速度有效地推进。这些纹理（磁序中的纳米级旋转）包括斯格明子、半斯格明子（Meron）及其反粒子。反铁磁体已被证明可以承载这些纹理的版本，由于不存在杂散场，这些纹理在太赫兹动力学、无偏转运动和改进的尺寸缩放方面具有很高的潜力。在这里，我们展示了拓扑自旋纹理、半子和反子，可以在室温下生成，并使用薄膜 CuMnAs 中的电脉冲可逆地移动，CuMnAs 是一种半金属反铁磁体，是自旋电子应用的测试平台系统。半子和反子位于 180° 畴壁上，并沿电流脉冲的方向移动。反铁磁子的发电和操纵是实现反铁磁薄膜作为高密度、高速磁存储器件中有源组件的全部潜力的关键一步。