A charge carrier transport model able to describe the typical modes of operation and some non-ideal ones from electrolyte-gated field effect transistors and organic electrochemical transistors (OECTs) is proposed. The analysis include the effect of 2D or 3D percolation transport (PT) and the influence of a shallow exponential trap distribution on the transport. Under these considerations, a non-constant accumulation layer thickness along the channel can be formed, resulting in a non-constant effective mobility. The accumulation thickness can depict 2D or 3D PT or even a transition between them. This transition can produce a non-ideal profile between the linear and saturation regimes in the output curve, region in which a lump appears. Other analyzed phenomenon is the non-linear behavior for low drain voltage in the output curve, even considering an ohmic contact. This phenomenon is attributed to the traps distribution profile into the semiconductor and the thin accumulation layer thickness close to the injection contact. The conditions when the linear field effect mobility is higher or lower than the saturation one is also analyzed. Finally, electrolyte-gated organic field effect transistors and OECT experimental data are successfully fitted with this model showing its versatility.

中文翻译：

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电解质门控晶体管中载流子传输的一般模型

提出了一种能够描述电解质门控场效应晶体管和有机电化学晶体管 (OECT) 的典型工作模式和一些非理想工作模式的电荷载流子传输模型。分析包括 2D 或 3D 渗透传输 (PT) 的影响以及浅指数陷阱分布对传输的影响。在这些考虑下，可以形成沿沟道的非恒定积累层厚度，从而导致非恒定有效迁移率。累积厚度可以描绘 2D 或 3D PT 甚至它们之间的过渡。这种转变会在输出曲线中的线性和饱和状态之间产生一个非理想的曲线，在该区域中会出现一个块。其他分析现象是输出曲线中低漏极电压的非线性行为，甚至考虑欧姆接触。这种现象归因于半导体中的陷阱分布剖面和靠近注入接触的薄积累层厚度。还分析了线性场效应迁移率高于或低于饱和迁移率的情况。最后，电解质门控有机场效应晶体管和 OECT 实验数据成功地拟合了该模型，显示了其多功能性。