The emergence of big data has increased the requirements for computing and processing systems. Memristors–electrical components that simulate the synapses and neurons of the human brain—have been proposed to help meet these requirements. Optoelectronic synapses are excited by optical signals and have the advantages of low crosstalk, high bandwidth, and low power consumption. Herein, a MOS structure optoelectronic synapse device based on an amorphous silicon (a-Si_1-xSn_x; x = 0.0457) alloy thin film and an AlO_y thin film was fabricated via oxygen vacancy energy band and heterostructure design. Significantly, the device exhibited ultralong decay time of 3576.07 s and a broadband response from the visible to the near-infrared-I region. A series of important synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, short-term memory to long-term memory transition, and learning experience behaviour, was successfully simulated on the device. We simulated a 3 × 3 optoelectronic synapse array, which can simulate the visual memory of images observed by the human eye. The effect of ‘pupil’ scaling on image memory was simulated by adjusting the read voltage. Based on these advantages, the optoelectronic synaptic device developed in this study has significant potential for application in the new generation of artificial synaptic systems.

大数据的出现对计算和处理系统提出了更高的要求。忆阻器——模拟人脑突触和神经元的电子元件——已被提出来帮助满足这些要求。光电突触由光信号激发，具有低串扰、高带宽和低功耗等优点。在此，一种基于非晶硅（a-Si _1-x Sn _x；x = 0.0457）合金薄膜和AlO _{y的MOS结构光电突触器件}通过氧空位能带和异质结构设计制备薄膜。值得注意的是，该器件表现出 3576.07 秒的超长衰减时间和从可见光到近红外 I 区域的宽带响应。该设备成功地模拟了一系列重要的突触功能，包括兴奋性突触后电流、双脉冲促进、短期记忆到长期记忆的转换以及学习体验行为。我们模拟了一个 3×3 的光电突触阵列，可以模拟人眼观察到的图像的视觉记忆。通过调整读取电压来模拟“瞳孔”缩放对图像存储器的影响。基于这些优势，