2D room-temperature magnetic materials are of great importance in future spintronic devices while only very few are reported. Herein, a plasma-enhanced chemical vapor deposition approach is exploited to construct the 2D room-temperature magnetic MnGa₄-H single crystal with a thickness down to 2.2 nm. The employment of H₂ plasma makes hydrogen atoms can be easily inserted into the MnGa₄ lattice to modulate the atomic distance and charge state, thereby ferrimagnetism can be achieved without destroying the structural configuration. The as-obtained 2D MnGa₄-H crystal is high-quality, air-stable, and thermo-stable, demonstrating robust and stable room-temperature magnetism with a high Curie temperature above 620 K. This work enriches the 2D room-temperature magnetic family and opens up the possibility for the development of spintronic devices based on 2D magnetic alloys.

中文翻译：

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氢插入诱导的二维 MnGa4-H 中的室温磁性

二维室温磁性材料在未来的自旋电子器件中非常重要，但报道很少。在此，利用等离子体增强化学气相沉积方法构建厚度低至 2.2 nm 的二维室温磁性 MnGa _{4 -H 单晶。H 2}等离子体的使用使得氢原子可以很容易地插入到MnGa ₄晶格中以调节原子距离和电荷状态，从而在不破坏结构构型的情况下实现亚铁磁性。所获得的二维 MnGa ₄-H 晶体是高质量、空气稳定和热稳定的，显示出强大而稳定的室温磁性，居里温度超过 620 K。这项工作丰富了 2D 室温磁性系列，并开辟了可能性基于二维磁性合金的自旋电子器件的开发。