Featured initial microstructures of Mg-11Gd-4Y-2Zn-0.5Zr alloy (wt%) were obtained by adjusting temperatures of solid solution and cooling methods, including island intergranular 18R and 14H LPSO phases with low-density stacking faults, differentially spaced lamellar intragranular 14H-LPSO phases, and network intergranular 18R-LPSO phases with high-density intragranular stacking faults. Effects of these featured LPSO phases and stacking faults on dynamic recrystallization (DRX) behavior were investigated via hot compression. Promoted DRX behavior via particle stimulated nucleation (PSN) is introduced by coexisting intergranular island 18R and 14H LPSO phases and intragranular wide spacing lamellar 14H-LPSO phases, contributing the highest DRX fraction of 42.6%. Conversely, it is found that DRX behavior with network intergranular 18R-LPSO phases and dense intragranular stacking fault is considerably inhibited with the lowest fraction of 22.8%. That is, the restricted DRX due to dislocations pinning by stacking faults overwhelms the enhanced DRX behavior via PSN of island intergranular 18R and 14H LPSO phases. Specially, compared with dense intragranular lamellar 14H-LPSO phases, high-density stacking faults exert a larger inhibition effect on DRX behavior.

通过调节固溶温度和冷却方法，获得了 Mg-11Gd-4Y-2Zn-0.5Zr 合金（wt%）的特征初始显微组织，包括具有低密度堆垛层错的岛状晶间 18R 和 14H LPSO 相、不同间距的层状晶内晶相。 14H-LPSO 相和具有高密度晶内堆垛层错的网络状晶间 18R-LPSO 相。通过热压缩研究了这些特征 LPSO 相和堆垛层错对动态再结晶 (DRX) 行为的影响。共存的粒间岛 18R 和 14H LPSO 相以及粒内宽间距层状 14H-LPSO 相通过粒子刺激成核 (PSN) 引入了促进 DRX 行为，贡献了 42.6% 的最高 DRX 分数。相反，我们发现网络状晶间 18R-LPSO 相和致密晶内堆垛层错的 DRX 行为受到显着抑制，最低分数为 22.8%。也就是说，由于堆垛层错引起的位错钉扎而导致的受限 DRX 压倒了通过岛状晶间 18R 和 14H LPSO 相的 PSN 增强的 DRX 行为。特别是，与致密的晶内层状 14H-LPSO 相相比，高密度堆垛层错对 DRX 行为具有更大的抑制作用。