Doped 2D transition metal dichalcogenides have attracted much attention as room-temperature ferromagnetism can be realized in such semiconductors. For example, the magnetism of vanadium-doped WS₂ (V-WS₂) has been revealed, but there is still confusion about how the substituted vanadium atoms affect the carrier scattering of V-WS₂. Here, we study the electron–phonon coupling and carrier scattering of V-WS₂ by temperature-dependent Raman spectroscopy and electrical transport measurements. We identify a characteristic Raman peak at ∼212 cm⁻¹, a fingerprint for V-WS₂. We also reveal that the electron–phonon coupling is strengthened in V-WS₂ and becomes more sensitive to temperature, which suppresses the carrier mobility and improves the sensitivity of its electronic performance to temperature. Moreover, the substituted vanadium not only causes an n- to p-type transition of the carrier transport behavior but also serves as charged impurities, making ionization scattering dominate the carrier transport process in V-WS₂. Such modulation of carrier transport behavior in V-WS₂ will facilitate its application in electronic and spintronic devices.

中文翻译：

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二维二硫化钨中钒掺杂的拉曼光谱和载流子散射

由于可以在此类半导体中实现室温铁磁性，掺杂的二维过渡金属二硫化物引起了广泛关注。例如，钒掺杂 WS ₂ (V-WS ₂ ) 的磁性已被揭示，但关于取代的钒原子如何影响 V-WS ₂的载流子散射仍然存在混淆。在这里，我们通过温度相关的拉曼光谱和电传输测量研究了 V-WS ₂的电子-声子耦合和载流子散射。^{我们在 ∼212 cm -1}处识别出特征拉曼峰，这是 V-WS ₂的指纹。我们还揭示了电子 - 声子耦合在 V-WS _{2中得到加强}并且对温度变得更加敏感，从而抑制载流子迁移率并提高其电子性能对温度的敏感性。此外，取代的钒不仅导致载流子传输行为从 n 型到 p 型转变，而且还充当带电杂质，使电离散射主导 V-WS 2 中的载流子传输_过程。V-WS ₂中载流子传输行为的这种调制将促进其在电子和自旋电子设备中的应用。