With the increase in applied voltage and the decrease in volume, integrated electronic modules have become electrostatic sensitive. ZnO microvaristors doped silicone rubber (SiR) composite, with electric field-dependent conductivity, shows promising prospects for solving the electrostatic problem. In this study, 20 vol% to 50 vol% ZnO/SiR composite films, filled with 10–30 μm ZnO microvaristors, were prepared and put into the test of electrostatic discharge. Compared with the insulating and conducting materials, ZnO/SiR composites achieve the lowest initial voltage and a short time constant of electrostatic discharge. With the increase of ZnO microvaristors volume fraction, from 20% to 50%, the initial voltage and the time constant of electrostatic discharge drop from 1.78 to 0.72 kV and 3.1 ms to 0.4 μs. When the ZnO volume fraction is higher than 30%, there is no residual voltage after 0.1 s. To explore the reason behind different electrostatic discharge performances of the ZnO/SiR composites, the conductivities of the composites were measured. It is found that the break-over voltage of the composite drops with the increase in the ZnO microvaristors volume fraction. When a high voltage impulse is applied on the ZnO/SiR film, the composite will turn to the conducting state and release the electrostatic charge adaptively so that the initial voltage can be controlled. This work supplies a novel electrostatic discharge idea for electric and electronic devices.

中文翻译：

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ZnO微压敏电阻掺杂硅橡胶复合材料的自适应静电放电性能

随着施加电压的增加和体积的减小，集成电子模块变得对静电敏感。ZnO微压敏电阻掺杂硅橡胶（SiR）复合材料具有电场依赖性电导率，在解决静电问题方面显示出广阔的前景。本研究制备了20 vol%至50 vol% ZnO/SiR复合薄膜，填充10-30 μm ZnO微压敏电阻，并进行静电放电测试。与绝缘导电材料相比，ZnO/SiR复合材料具有最低的初始电压和较短的静电放电时间常数。随着ZnO微压敏电阻体积分数的增加，从20%增加到50%，静电放电的初始电压和时间常数从1.78 kV下降到0.72 kV，从3.1 ms下降到0.4 μs。当ZnO体积分数高于30%时，0.1s后无残余电压。为了探究 ZnO/SiR 复合材料静电放电性能不同的原因，测量了复合材料的电导率。研究发现，复合材料的击穿电压随着ZnO微压敏电阻体积分数的增加而下降。当对ZnO/SiR薄膜施加高压脉冲时，复合材料将转变为导电状态并自适应地释放静电荷，从而可以控制初始电压。这项工作为电气和电子设备提供了一种新颖的静电放电思路。