InP quantum dots (QDs) have great potential as emitters for solid-state lighting, lasing, and bioimaging without the inherent toxicity concern of Cd and Pb-based emitters. Indium phosphide’s small bandgap and high covalency make it uniquely capable of color-pure fluorescence that can be tuned throughout the visible and lower IR spectrum. Until recently, InP-based QDs consistently underperformed when compared with CdSe-based counterparts. Recent efforts to understand indium phosphide’s nonclassical growth mechanisms, control the nanocrystal shape, control in situ formation of surface oxides, and grow thick, uniform shells have produced InP-based QDs comparable to their CdSe competitors with >95% quantum yields (QYs) in red, green, and blue emission wavelengths. This review covers the most common synthetic techniques, the most recent theories on InP formation mechanisms, the current understanding of InP surface chemistries, and the breadth of fluorescent properties of InP-based QDs.

中文翻译：

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InP 量子点的合成、表面化学和荧光特性

InP 量子点 (QD) 作为固态照明、激光和生物成像的发射体具有巨大的潜力，而没有 Cd 和 Pb 基发射体的固有毒性问题。磷化铟的小带隙和高共价性使其具有独特的颜色纯荧光能力，可以在整个可见光和较低的红外光谱范围内进行调谐。直到最近，与基于 CdSe 的对应物相比，基于 InP 的 QD 一直表现不佳。最近努力了解磷化铟的非经典生长机制，控制纳米晶体形状，原位控制表面氧化物的形成，并生长厚而均匀的壳，已经产生了与 CdSe 竞争对手相当的基于 InP 的量子点，在红色、绿色和蓝色发射波长下的量子产率 (QY) > 95%。这篇综述涵盖了最常见的合成技术、关于 InP 形成机制的最新理论、目前对 InP 表面化学的理解，以及基于 InP 的量子点的荧光特性的广度。