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Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications
Chemical Society Reviews ( IF 46.2 ) Pub Date : 2023-01-05 , DOI: 10.1039/d1cs01016f
Yao Xiao 1 , Chengyi Xiong 1 , Miao-Miao Chen 1 , Shengfu Wang 1 , Lei Fu 2, 3 , Xiuhua Zhang 1
Affiliation  

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

中文翻译:

二维过渡金属硫族化物的结构调制:方法学、机理和应用的最新进展

随着二维 (2D) 材料的发展,过渡金属二硫化物 (TMD) 已成为基础科学和实际应用中最受欢迎的模型材料系列之一。由于定制化和多功能化的需求不断增长,TMD 中引入了数十种调制结构。在这篇综述中,我们对 TMD 的结构调制(包括点、线性和面外结构)进行了系统和全面的概述,遵循并更新了硅和相关体半导体的传统分类。特别是,我们关注调制 TMD 结构的结构特征并分析相应的根本原因。我们还总结了调制方法、机制、基于调制 TMD 结构的特性和应用。最后,我们展示了 TMD 结构调制的挑战和前景,并预测了可以实现哪些突破以及如何实现突破的潜在方向。
更新日期:2023-01-05
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