All-solid-state switches are one of the core components of pulsed power supply systems. However, the voltage level of a single switch is limited. By optimizing the chip structure, the voltage level of a single switch can be improved. Due to the immaturity of the production process and the positive correlation between the blocking voltage and the on-resistance of the switch, it is difficult to improve the blocking voltage and the continuous forward current of a single switch simultaneously. The series-connected switch is a way to increase the switch's blocking voltage without reducing the switch's continuous forward current. Magnetically coupled isolated drive and resistor-capacitor forced voltage equalization techniques are investigated to increase the blocking voltage of the switches using multiple SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) in series connections. Meanwhile, a special overcurrent protection scheme is designed to improve the reliability of the series-connected switch. Finally, a high-voltage solid-state switch is developed based on the SiC MOSFET series connections, whose output pulse width is adjustable from 20 to 300 μs, frequency is adjustable from 1 Hz to 3 kHz, the maximum output voltage can reach 57 kV (1 Hz), and the overcurrent protection time is about 1 μs.

中文翻译：

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一种基于SiC MOSFET系列的新型高压固态开关及其过流保护

全固态开关是脉冲电源系统的核心部件之一。然而，单个开关的电压水平是有限的。通过优化芯片结构，可以提高单个开关的电压等级。由于生产工艺的不成熟以及开关的阻断电压和导通电阻呈正相关关系，难以同时提高单个开关的阻断电压和持续正向电流。串联开关是一种在不降低开关连续正向电流的情况下增加开关阻断电压的方法。研究了磁耦合隔离驱动和电阻电容强制电压均衡技术，以使用串联的多个 SiC 金属氧化物半导体场效应晶体管 (MOSFET) 来提高开关的阻断电压。同时，设计了特殊的过流保护方案，提高了串联开关的可靠性。最后，开发了基于SiC MOSFET串联的高压固态开关，其输出脉冲宽度在20~300 μs可调，频率在1 Hz~3 kHz可调，最大输出电压可达57 kV （1Hz），过流保护时间约为1μs。设计了特殊的过流保护方案，提高了串联开关的可靠性。最后，开发了基于SiC MOSFET串联的高压固态开关，其输出脉冲宽度在20~300 μs可调，频率在1 Hz~3 kHz可调，最大输出电压可达57 kV （1Hz），过流保护时间约为1μs。设计了特殊的过流保护方案，提高了串联开关的可靠性。最后，开发了基于SiC MOSFET串联的高压固态开关，其输出脉冲宽度在20~300 μs可调，频率在1 Hz~3 kHz可调，最大输出电压可达57 kV （1Hz），过流保护时间约为1μs。