In order to reveal the effect of insulating nano film on the insulation strength of SF₆ gas gap, SiO₂ nano film was deposited on the electrode surface by the plasma-enhanced chemical vapour deposition technique. The power frequency breakdown characteristics of SF₆ gas under Cu and Al electrodes were obtained before and after coating. The results showed that when the Cu electrode was coated, the breakdown voltage was up to at most 11.5% higher than that of an uncoated Cu electrode in the pressure range of 0.2–0.5 MPa. When the Al electrode was coated, the breakdown voltage of SF₆ gas was lower than that of an uncoated one in the pressure range of 0.2–0.5 MPa. The breakdown voltage of SF₆ gas under the Cu electrode was slightly lower than that under the Al electrode, but the breakdown voltages under the coated Cu electrode were significantly higher than that under the coated Al electrode. Through SEM tests, it was found that the surface roughness of the electrode decreases after coating, but particles were formed on the surface of the Al electrode. The content of metal fluoride formed on the coated Al electrode under multiple breakdowns was significantly higher than that on the coated Cu electrode. The research results could provide references for improving insulation performance of GIS equipment.

中文翻译：

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铜、铝电极上沉积SiO2纳米薄膜对SF6气体工频击穿电压的影响

为了揭示绝缘纳米薄膜对SF ₆气隙绝缘强度的影响，采用等离子体增强化学气相沉积技术在电极表面沉积SiO _{2纳米薄膜。}获得了涂覆前后SF ₆气体在Cu、Al电极下的工频击穿特性。结果表明，在0.2~0.5 MPa压力范围内，涂覆Cu电极时的击穿电压比未涂覆Cu电极高出最多11.5%。当Al电极涂覆时，在0.2~0.5 MPa压力范围内，SF ₆气体的击穿电压低于未涂覆Al电极的击穿电压。_{SF 6}击穿电压Cu电极下的击穿电压略低于Al电极下的击穿电压，但涂层Cu电极下的击穿电压明显高于涂层Al电极下的击穿电压。通过SEM测试发现，涂覆后电极表面粗糙度有所降低，但Al电极表面形成了颗粒。多次击穿下涂层Al电极上形成的金属氟化物含量明显高于涂层Cu电极上的金属氟化物含量。研究结果可为提高GIS设备绝缘性能提供参考。