Ionic feature of halide perovskites may lead to the formation of defect states in the polycrystalline films, which can deteriorate the device performance. To solve this issue, a low-temperature seed-assisted growth method can contribute to defect-passivated CsPbI_1.2Br_1.8 perovskite films by introducing CuInSe₂ quantum dots (QDs). As a result, the migration channels inside perovskite grains can be obviously suppressed, but few positive effects on the ions migration in grain boundaries. Conversely, this appearance demonstrate that the location of CuInSe₂ QDs is grain interior, but not grain boundary. Meanwhile, the lower defect density can help promoting device efficiency from 8.97% to 10.26%, which is among the high-efficiency level. Besides, this work can also provide an in-depth insight into the issue of photoinduced halide segregation.

中文翻译：

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CuInSe2 量子点辅助全无机钙钛矿太阳能电池中卤化物离子的成核调控和锚定

卤化物钙钛矿的离子特性可能导致多晶薄膜中形成缺陷态，从而降低器件性能。为了解决这个问题，低温种子辅助生长方法可以通过引入 CuInSe ₂量子点 (QD)来促进缺陷钝化 CsPbI _1.2 Br _{1.8钙钛矿薄膜。}结果，可以明显抑制钙钛矿晶粒内部的迁移通道，但对晶界离子迁移几乎没有积极影响。_{相反，这种外观表明 CuInSe 2}的位置QDs 是晶粒内部，但不是晶界。同时，较低的缺陷密度有助于将器件效率从8.97%提升至10.26%，处于高效水平。此外，这项工作还可以深入了解光致卤化物偏析问题。