We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga₂O₃ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO₂/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO₂ by high-dielectric-constant Ga₂O₃ and the relatively high characteristic phonon frequencies of Ga₂O₃. Raman spectroscopy and electrical measurements indicate that Ga₂O₃ passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al₂O₃.

中文翻译：

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用机械转移大面积 Ga2O3 钝化石墨烯和抑制界面声子散射

我们通过在液态 Ga 金属上合成的超薄非晶 Ga ₂ O ₃的机械转移展示​​了石墨烯的大面积钝化层。_{对 SiO 2} /Si上毫米级钝化石墨烯和裸石墨烯的温度依赖性电气测量结果的比较表明，钝化石墨烯保持其应用所需的高场效应迁移率。令人惊讶的是，由于高介电常数 Ga ₂ O ₃对 SiO ₂的表面光学声子模式的屏蔽以及相对Ga 的高特征声子频率₂ O ₃。拉曼光谱和电学测量表明，Ga ₂ O _{3钝化还可以保护石墨烯免受进一步处理，例如 Al 2} O ₃的等离子增强原子层沉积。