Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.

中文翻译：

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砷化铟量子点：铅基红外发射纳米材料的替代品

发射红外线 (IR) 的胶体量子点 (QD) 因其低成本的解决方案可加工性和可调谐发射而成为众多光子、光电子和生物医学应用的有前途的构建模块。其中，铅基和汞基量子点是目前发展最快的材料。然而，由于毒性问题，科学界正在关注更安全的替代品。在这方面，砷化铟 (InAs) 量子点是最好的候选者之一，因为它们可以吸收和发射整个近红外光谱范围内的光，并且符合 RoHS 标准，最近的趋势表明人们对此类量子点重新产生了兴趣的材料。本综述重点关注胶体 InAs 量子点，旨在提供从其合成和表面化学到合成后修饰的最新概述。我们提供了从最初的合成方法到控制尺寸、尺寸分布、电子性能和载流子动力学能力的最新进展的全面概述。然后，我们描述了应用于 InAs 量子点以及 InAs 基异质结构的掺杂和合金化策略。此外，我们还介绍了 InAs 量子点的最先进应用，特别关注生物成像和场效应晶体管。最后，我们讨论了开放的挑战和未来的前景。