Organic thin-film transistors (OTFTs) are essential components for future flexible/wearable electronics. To fabricate OTFTs in an industrial level, following requirements should be met: high carrier mobility, low-voltage operation, compatibility with a reliable high-resolution patterning process, and high mechanical and electrical stability. Here, we report the synthesis of six-branched cross-linkers (6Bx) having an ultrahigh photo-cross-linking efficiency and its application to photo-patterning gate dielectric (GD) polymers and channel semiconducting (CS) polymers in polymer-based OTFTs. The use of 6Bx permits the generation of a high-resolution-patterned ultra-thin polymer gate dielectric with a low leakage current (7 × 10^–9 A cm^–2 at 1 MV cm^–1). Moreover, cross-linking the GD polymer interfaced with p- or n-type CS polymer induces alignment of CS polymer chains at the interface. This yields excellent hole and electron mobilities of 12.42 and 10.11 cm² V^–1s^–1, respectively, from p- and n-type OTFTs operated at <3 V, which are remarkably improved carrier mobilities at substantially low operation voltages compared to those by conventional test beds. Further, the fabrication of logic gates and ring oscillators demonstrates the reliability of polymer OTFTs cross-linked with 6Bx. This work presents a universal strategy for high mobility, reliable, and low-voltage operating OTFTs.

中文翻译：

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使用六支有机叠氮化物的载流子迁移率超过 10 cm2V–2s–1 的低压有机晶体管

有机薄膜晶体管 (OTFT) 是未来柔性/可穿戴电子产品的重要组成部分。要制造工业级的 OTFT，应满足以下要求：高载流子迁移率、低电压操作、与可靠的高分辨率图案化工艺的兼容性以及高机械和电气稳定性。在这里，我们报告了具有超高光交联效率的六支链交联剂 (6Bx) 的合成及其在基于聚合物的 OTFT 中的光图案化栅极电介质 (GD) 聚合物和沟道半导体 (CS) 聚合物中的应用. 使用 6Bx 可以生成具有低漏电流（7 × 10 ^–9 A cm ^–2在 1 MV cm ^–1). 此外，交联与p型或n型 CS 聚合物界面的 GD 聚合物会导致 CS 聚合物链在界面处对齐。^{这产生了 12.42 和 10.11 cm 2} V ^–1 s ^–1的出色空穴和电子迁移率，分别来自在 <3 V 下运行的p - 和n - 型 OTFT，与那些相比，这在相当低的工作电压下显着提高了载流子迁移率通过常规试验台。此外，逻辑门和环形振荡器的制造证明了与 6Bx 交联的聚合物 OTFT 的可靠性。这项工作提出了一种用于高迁移率、可靠和低压操作 OTFT 的通用策略。