In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆⁻ octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM⁺ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI₃ NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI₃ NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10^–11 A, a responsivity of up to 0.237 A W⁻¹, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%.

近年来，具有优异光电性能和低毒性的无铅CsSnI ₃钙钛矿材料在光电器件中备受关注。_{然而，CsSnI 3}中锡空位密度高、SnI ₆ ^{-八面体结构变形和Sn 2+}态氧化等深能级缺陷是实现高性能、稳定性好的CsSnI ₃基光电器件的主要挑战。 . 本工作采用缺陷钝化法解决上述问题，研制出超稳定、高性能的CsSnI ₃纳米线 (NWs) 光电探测器 (PDs) 是通过将 1-丁基-2,3-二甲基咪唑盐 (BMIMCl) 掺入钙钛矿中制成的。通过材料分析和理论计算，BMIM ⁺离子可以有效钝化Sn相关缺陷并降低CsSnI ₃ NW PD的暗电流。为了进一步降低器件的暗电流，引入了聚甲基丙烯酸甲酯，最终，双钝化 CsSnI ₃ NWPD 显示出超高性能，具有 2 × 10 ^–11 A 的超低暗电流，响应率高达0.237 AW ⁻¹ , 1.18 × 10 ^{12的高检出率}Jones 和 180 dB 的线性动态范围。此外，未封装器件在空气中（25℃，50%湿度）存放60天后，器件性能表现出超高的稳定性，器件性能保持在90%以上。