Metal oxide semiconductors, such as ZnO and SnO₂, are widely used for civil gas sensing applications. However, the performance of these gas sensors degrades significantly if they are irradiated with high levels of gamma rays so they are not suited to use in harsh environments. This study demonstrates a gamma ray tolerance of 150 kilo-Gray (kGy) for solution-processed amorphous ZnSnO (a-ZTO) thin film due to its radiation hardness. The gas sensing response measurement shows that the gas response of gas sensor is increased after gamma irradiation because oxygen vacancies are induced by gamma radiation. The increased gas response is maintained up to 150 kGy. This study demonstrates that a-ZTO thin film acts as a radiation-resistant sensing layer for gas sensors in a space radiation environment.

金属氧化物半导体，例如 ZnO 和 SnO ₂，​​广泛用于民用气体传感应用。然而，如果这些气体传感器受到高强度伽马射线的照射，它们的性能会显着下降，因此它们不适合在恶劣环境中使用。该研究表明溶液处理的非晶 ZnSnO (a-ZTO) 薄膜由于其辐射硬度而具有 150 千戈瑞 (kGy) 的伽马射线耐受性。气敏响应测量表明，在伽马辐照后，气敏传感器的气体响应增加，这是因为伽马辐照会引起氧空位。增加的气体响应保持在 150 kGy。本研究表明，a-ZTO 薄膜可作为空间辐射环境中气体传感器的抗辐射传感层。