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Thermal drag effect in quantum Hall circuits
Physical Review B ( IF 3.7 ) Pub Date : 2022-09-30 , DOI: 10.1103/physrevb.106.l121405
Edvin G. Idrisov , Ivan P. Levkivskyi , Eugene V. Sukhorukov

We study the thermal drag between two mesoscopic quantum Hall (QH) circuits. Each circuit consists of an ohmic contact perfectly coupled to quantum Hall edge states. The drag is caused by strong capacitive coupling between ohmic contacts. The nonequilibirum conditions and the electron-electron interaction are considered by using the bosonization technique in the combination with the scattering theory or, equivalently, with the help of the Langevin equations. The thermal drag current in the passive circuit, the noise power of the corresponding heat current, and the Fano factor are calculated and analyzed for different coupling strengths.

中文翻译:

量子霍尔电路中的热阻力效应

我们研究了两个介观量子霍尔 (QH) 电路之间的热阻力。每个电路都包含一个与量子霍尔边缘状态完美耦合的欧姆接触。阻力是由欧姆触点之间的强电容耦合引起的。非平衡条件和电子-电子相互作用通过使用玻色化技术结合散射理论或等效地借助朗之万方程来考虑。对不同耦合强度的无源电路中的热阻电流、相应热电流的噪声功率和Fano因子进行了计算和分析。
更新日期:2022-09-30
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