It is well known that low power conversion efficiency (PCE) has been key issue need resolve for Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells. In this work, we tried to improve the PCE by annealing Cu₂ZnSnS₄ (CZTS) precursor films in a temperature ranging from 100 ^oC to 500 ^oC in air before preparing CZTSSe absorber through selenization of the CZTS, and study influence mechanism of the air-annealing on PCE of CZTSSe solar cells by quantitative analysis. The results show that the PCE of the CZTSSe solar cell increases from 7.50% to 8.94% as the temperature increases from room temperature to 100 ^oC and decreases from 8.94% to 5.09% from 100 ^oC to 500 ^oC. By quantitative analysis of contribution degree of V_oc, J_sc and FF to PCE and of J₀, J_L, R_s and R_sh to V_oc, J_sc and FF, it is calculated that contribution degree of J₀, R_s, J_L and R_sh to the increased PCE is 50.47%, 38.43%, 9.80% and 1.30%, respectively, and to the decreased PCE is − 67.68%, − 22.38%, − 1.01% and − 8.93%, respectively. It is deduced by XRD, Raman and EDS measurements that the J₀ is mainly determined by interfacial recombination induced by [2Cu_Zn + Sn_Zn] defect cluster near the surface of the CZTSSe, and the R_s is by crystal quality of CZTSSe and amount of Zn(S,Se) near surface of the CZTSSe. The change of the [2Cu_Zn + Sn_Zn], Zn(S,Se) and crystal quality should be attributed to that of O content near surface of CZTS induced by air-annealing.

众所周知，低功率转换效率(PCE)一直是Cu ₂ ZnSn(S,Se) ₄ (CZTSSe)太阳能电池需要解决的关键问题。在这项工作中，我们试图通过在空气中对 Cu ₂ ZnSnS ₄ (CZTS) 前驱体薄膜 进行退火来改善 PCE，然后通过^{CZTS的硒化制备CZTSSe}吸收剂，并研究其影响机理。通过定量分析CZTSSe太阳能电池PCE的空气退火。结果表明，随着温度从室温升高到 100  ^{o C，CZTSSe 太阳能电池的 PCE 从 7.50% 增加到 8.94%，从 100 o} C 则从 8.94% 降低到 5.09%。 C 至 500  ^o C。通过定量分析 V _oc、J _sc和 FF 对 PCE 和 J ₀、J _L、R _s和 R _sh对 V _oc、J _sc和 FF 的贡献度，计算出贡献度J ₀、R _s、J _L和 R _sh对增加的 PCE 分别为 50.47%、38.43%、9.80% 和 1.30%，对减少的 PCE 分别为 - 67.68%、 - 22.38%、 - 1.01% 和 -分别为 8.93%。通过XRD、Raman和EDS测量推断，J ₀主要由[2Cu]诱导的界面复合决定。_Zn + Sn _Zn ] CZTSSe 表面附近的缺陷簇，R _s取决于 CZTSSe 的晶体质量和 CZTSSe 表面附近的 Zn(S,Se) 量。[2Cu _Zn + Sn _Zn ]、Zn(S,Se)和晶体质量的变化应归因于空气退火引起的CZTS表面附近O含量的变化。