The Boltzmann limit of the subthreshold swing 2.3kT/q in MOSFETs is a widely-disseminated myth originated from a common amalgam between drain current and mobile charge. We show that the carrier mobility can substantially increase from weak to strong inversion due to the screening of potential fluctuations and Coulomb scattering. The mobility rise enables the current to increase faster than the inversion charge, thus breaking the apparent theoretical limit.

中文翻译：

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突破 MOSFET 的亚阈值斜率限制

MOSFET 中亚阈值摆动 2.3kT/q 的玻尔兹曼极限是一个广为流传的神话，源于漏极电流和移动电荷之间的共同混合物。我们表明，由于潜在波动和库仑散射的筛选，载流子迁移率可以从弱反转到强反转显着增加。迁移率的上升使电流比反转电荷增加得更快，从而打破了明显的理论极限。