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Analytical Vth Modeling for Dual-Gate MOSFETs With Independent Gate Control
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2022-09-05 , DOI: 10.1109/ted.2022.3201064
Soumajit Ghosh 1 , M. Miura-Mattausch 1 , T. Iizuka 1 , Hafizur Rahaman 2 , H. J. Mattausch 1
Affiliation  

We report a study on the threshold voltage ( ${V}_{\text{th}}$ ) description for dual-gate MOSFETs with independent gate control, which provides the major contribution for multigate MOSFETs. Specifically, we focus on the understanding of the control mechanisms with two gates, leading to the derivation of an appropriate ${V}_{\text{th}}$ description. The results demonstrate that ${g}_{m}$ -linear extrapolation (GMLE) method can extract a ${V}_{\text{th}}$ value, which reflects the device physics in the best way. Both front- and back-gate charges are found to induce important contributions to the threshold condition. The newly developed ${V}_{\text{th}}$ equation includes only device parameters and accurately predicts ${V}_{\text{th}}$ value for any back-gate bias conditions. Based on this ${V}_{\text{th}}$ model, a further analytical equation is derived for the situation, where the back-gate charge becomes comparable and starts to exceed the front-gate charge. The independent gate control induces two ${V}_{\text{th}}$ values if the back-gate control becomes strong enough in comparison to that of the front gate. It is further shown that the developed model can be applied for device performance optimization to meet circuitry requirements.

中文翻译:

具有独立栅极控制的双栅极 MOSFET 的 Vth 分析建模

我们报告了一项关于阈值电压的研究( ${V}_{\text{th}}$ ) 描述具有独立栅极控制的双栅极 MOSFET,它为多栅极 MOSFET 做出了主要贡献。具体来说,我们专注于理解具有两个门的控制机制,从而推导适当的 ${V}_{\text{th}}$描述。结果表明 ${g}_{m}$ -线性外推(GMLE)方法可以提取一个 ${V}_{\text{th}}$值,它以最好的方式反映了设备的物理特性。发现前栅电荷和后栅电荷都会对阈值条件产生重要影响。新开发的 ${V}_{\text{th}}$方程仅包含设备参数并准确预测 ${V}_{\text{th}}$任何背栅偏置条件的值。基于此 ${V}_{\text{th}}$模型中,导出了进一步的分析方程,用于背栅电荷变得可比并开始超过前栅电荷的情况。独立的门控引起两个 ${V}_{\text{th}}$如果与前门相比,后门控制变得足够强,则值。进一步表明,所开发的模型可用于器件性能优化以满足电路要求。
更新日期:2022-09-05
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