Charge transport and breakdown mecha- nisms of gate leakage current in lattice-matched In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were investigated by combining the current–voltage ( ${I}-{V}$ ) measurement, the bias-step stress method, and the emission microscopy (EMMI) technique. Based on a refined dislocation model, the detailed dislocation-related charge transport processes were depicted, suggesting an excessive Fowler–Nordheim (FN) tunneling current at high reverse biases. It is further proposed that: 1) at the heterojunction interface, these tunneling electrons will lose the obtained energy by releasing a large number of photons as “hot spots” and phonons as heat and 2) due to a reduced effective bandgap, the breakdown electric field at the dislocation site is significantly decreased compared with the defect-free region, which triggers a premature current breakdown, once the surface electric field is increased to the critical value.

中文翻译：

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晶格匹配 In₀.₁₇Al₀.₈₃N/GaN HEMT 中栅极漏电流的传输和击穿机制

通过结合电流-电压研究晶格匹配 In0.17Al0.83N/GaN 高电子迁移率晶体管 (HEMT) 中栅极漏电流的电荷传输和击穿机制。 ${I}-{V}$ ) 测量、偏置阶跃应力法和发射显微镜 (EMMI) 技术。基于改进的位错模型，详细描述了与位错相关的电荷传输过程，表明在高反向偏压下存在过多的 Fowler-Nordheim (FN) 隧穿电流。进一步提出：1）在异质结界面，这些隧穿电子将通过释放大量光子作为“热点”和声子作为热量而损失获得的能量；2）由于有效带隙减小，击穿电与无缺陷区域相比，位错处的电场显着降低，一旦表面电场增加到临界值，就会引发过早的电流击穿。