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The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2022-09-01 , DOI: 10.1109/ted.2022.3200301
Jiarui Chen 1 , Yuanzhang Su 2 , Chaowu Pan 1 , Weizhe Kuang 1 , Kai Yang 1 , Haochen Wang 1 , Maojun Wang 3 , Bo Zhang 1 , Qi Zhou 1
Affiliation  

In this work, the device stability of p-GaN gate HEMTs under self-heating effect is comprehensively investigated by the ON-state drain current injection (DCI) technique. By delicately modulating the DCI condition, the devices exhibit different chip temperatures ranging from 40 °C to 150 °C, while the devices show quite distinguishing instability behaviors. Particularly, substantial threshold voltage shift and saturation drain current degradation is constantly observed in the device with severe self-heating effect after DCI stress. Significant ${V}_{\text{th}}$ shift of +0.83 V and saturation current reduction up to 18% are observed after the DCI stress, corresponding to a chip temperature of ~150 °C. After the device degradation, the device characteristics show a recoverable dynamic. By investigating the gate leakage current together with the electrothermal device TCAD simulation, ${V}_{\text{th}}$ instability induced by the self-heating is revealed to be the electron trapping in the p-GaN gate-stack, while the saturation drain current degradation originates from a composited action of thermally enhanced electron trapping/de-trapping in p-GaN gate-stack as well as the access region at the hot spot close to the source field plate. The results reported in this work suggest that self-heating is a critical issue that may cause unstable operation of p-GaN gate HEMTs. The revealed underlying mechanisms are beneficial for further improving device stability.

中文翻译:

通态漏极电流注入 (DCI) 技术研究自热效应引起的 p-GaN 栅极 HEMT 器件不稳定性

在这项工作中,通过导通漏极电流注入(DCI)技术全面研究了自热效应下 p-GaN 栅极 HEMT 的器件稳定性。通过精细调节 DCI 条件,器件表现出从 40 °C 到 150 °C 的不同芯片温度,而器件表现出非常明显的不稳定性行为。特别是,在 DCI 应力后具有严重自热效应的器件中不断观察到大量的阈值电压偏移和饱和漏极电流退化。重要的 ${V}_{\text{th}}$在 DCI 应力之后观察到 +0.83 V 的偏移和高达 18% 的饱和电流降低,对应于 ~150 °C 的芯片温度。器件退化后,器件特性表现出可恢复的动态。通过研究栅极漏电流和电热器件 TCAD 仿真, ${V}_{\text{th}}$自热引起的不稳定性被揭示为 p-GaN 栅叠层中的电子俘获,而饱和漏极电流退化源于 p-GaN 栅叠层中热增强电子俘获/去俘获的复合作用以及靠近源场板的热点的接入区域。这项工作中报告的结果表明,自热是可能导致 p-GaN 栅极 HEMT 运行不稳定的关键问题。揭示的潜在机制有利于进一步提高器件稳定性。
更新日期:2022-09-01
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