Microscale light-emitting diodes (Micro-LEDs) have attracted intensive research attention due to their potential applications in high-resolution displays, wearables, and VR/AR headsets. However, their device performance can be compromised by the common Micro-LED lateral structure, usually with both two electrodes facing toward the p-side. Here, we developed printable, silicon-based vertical Micro-LEDs with two electrodes facing oppositely, which showed better heat dissipation, and were 60% brighter over conventional lateral Micro-LEDs. We further developed a novel double-tape-assisted transfer process, which allowed these vertical Micro-LEDs to be transferred completely to a polyimide tape in a simple yet reliable manner. Combined with a bonding scheme based on low-melting-point-patterned indium alloys, these printed Micro-LEDs on the tape can be further integrated onto silicon backplanes with a shared p-contact. Followed by forming an individual n-electrode connected to each pixel, a novel-inverted, vertical microdisplay prototype device with individually addressing cathodes was demonstrated for the first time.

中文翻译：

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转移印刷的垂直 GaN-on-Silicon Micro-LED 阵列，具有可单独寻址的阴极

微型发光二极管 (Micro-LED) 因其在高分辨率显示器、可穿戴设备和 VR/AR 耳机中的潜在应用而引起了广泛的研究关注。然而，它们的器件性能可能会受到常见的 Micro-LED 横向结构的影响，通常两个电极都面向 p 侧。在这里，我们开发了可印刷的硅基垂直 Micro-LED，其两个电极相对，具有更好的散热性，并且比传统的横向 Micro-LED 亮度高 60%。我们进一步开发了一种新型的双面胶带辅助转移工艺，使这些垂直 Micro-LED 能够以简单而可靠的方式完全转移到聚酰亚胺胶带上。结合基于低熔点图案铟合金的键合方案，这些印刷在磁带上的 Micro-LED 可以进一步集成到具有共享 p 触点的硅背板上。随后形成连接到每个像素的单独 n 电极，首次展示了具有单独寻址阴极的新型倒置垂直微型显示器原型设备。