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Improving the Response Speed of an Active-Current Controlled Field Emitter Arrays by Modifying the Controlled Current
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2022-09-08 , DOI: 10.1109/ted.2022.3201827
Deyi Huang 1 , Yicong Chen 1 , Chengyun Wang 1 , Juncong She 1 , Shaozhi Deng 1 , Jun Chen 1
Affiliation  

Using an active-current control (ACC) component such as MOSFET in field emitter arrays (FEAs) is an important way to achieve stable emission current. However, the controlled current of ACC may reduce the response speed of FEAs due to the longer charging process, which limits its application. In this work, a general model for the field emission of MOSFET-controlled FEAs has been established to study the influence of controlled saturation current on its response speed. It is found that the response speed which decreases nearly linearly as the saturation current decreases can be reduced down by above 1 order of magnitude comparing to the intrinsic value. The field emission characteristics of a MOSFET-controlled ZnO nanowire FEAs under different saturation current and duty ratio have been investigated, in which the result is in consistency with the model. A solution using a controlled current which is larger than the induced current during the charging process and can rapidly reduce down to the field emission current has been proposed for balancing the stability and response speed in MOSFET-controlled FEAs. All the results provide a method for obtaining fast response ACC-FEAs, which should be useful in the application that requires pulsed driving FEAs.

中文翻译:

通过修改受控电流提高有源电流控制场发射器阵列的响应速度,通过修改受控电流提高有源电流控制场发射器阵列的响应速度

在场发射器阵列 (FEA) 中使用 MOSFET 等有源电流控制 (ACC) 组件是实现稳定发射电流的重要方法。然而,ACC的受控电流可能会因充电过程较长而降低FEA的响应速度,从而限制了其应用。在这项工作中,建立了 MOSFET 控制的 FEA 场发射的通用模型,以研究受控饱和电流对其响应速度的影响。发现随着饱和电流的降低,响应速度几乎呈线性下降,与固有值相比,可以降低 1 个数量级以上。研究了不同饱和电流和占空比下 MOSFET 控制的 ZnO 纳米线 FEA 的场发射特性,其中结果与模型一致。为了平衡 MOSFET 控制的 FEA 的稳定性和响应速度,已经提出了一种使用控制电流的解决方案,该控制电流大于充电过程中的感应电流,并且可以快速降低到场发射电流。所有结果都提供了一种获得快速响应 ACC-FEA 的方法,这在需要脉冲驱动 FEA 的应用中应该是有用的。,在场发射器阵列 (FEA) 中使用 MOSFET 等有源电流控制 (ACC) 组件是实现稳定发射电流的重要方法。然而,ACC的受控电流可能会因充电过程较长而降低FEA的响应速度,从而限制了其应用。在这项工作中,建立了 MOSFET 控制的 FEA 场发射的通用模型,以研究受控饱和电流对其响应速度的影响。发现随着饱和电流的降低,响应速度几乎呈线性下降,与固有值相比,可以降低 1 个数量级以上。研究了不同饱和电流和占空比下 MOSFET 控制的 ZnO 纳米线 FEA 的场发射特性,其中结果与模型一致。为了平衡 MOSFET 控制的 FEA 的稳定性和响应速度,已经提出了一种使用控制电流的解决方案,该控制电流大于充电过程中的感应电流,并且可以快速降低到场发射电流。所有结果都提供了一种获得快速响应 ACC-FEA 的方法,这在需要脉冲驱动 FEA 的应用中应该是有用的。
更新日期:2022-09-08
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