This brief presents a fully integrated low-power, low noise bandgap reference (BGR) with load driving capability. With the BGR core resistors functioning as the feedback network of the current sourcing power transistor, the proposed BGR saves chip area, reduces noise while supporting current load driving. The circuit is implemented in two different processes for performance comparison, namely the $0.18\mathbf {\mathrm {\mu }}\text{m}$ RF CMOS and the BCD mixed-signal CMOS processes. Measurement results from chip samples of the two processes show similar performances, with an average temperature coefficient (TC) of 27.1ppm/°C over $\mathbf {-} 40\mathbf {\mathrm {\sim }} 125\mathbf {^{\circ} }\text{C}$ at a 1.8-V supply. The corresponding measured coefficient of variation ( $\mathbf {\mathrm {\sigma }}/\mathbf {\mathrm {\mu }}$ ) is around 0.3%, and the load driving capability can be up to $800\mathbf {\mathrm {\mu }}\text{A}$ . By reusing the feedback resistors, the chip prototype achieved a low noise density of $1.92~\mathbf {\mathrm {\mu }}\text{V}/\surd $ Hz, 285nV/ $\surd $ Hz and 4nV/ $\surd $ Hz at 10 Hz, 10 kHz and 100 kHz, respectively, while consuming a quiescent current of 396nA. The measured power supply rejection (PSR) is −39dB at 5Hz and −45dB at 1MHz. The influence of load current on PSR has also been analyzed and verified.

中文翻译：

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A − °C–125 °C 0.4-μA 低噪声带隙电压基准，具有 0.8-mA 负载驱动能力，使用共享反馈电阻器

本简介介绍了具有负载驱动能力的完全集成的低功耗、低噪声带隙基准 (BGR)。通过 BGR 核心电阻器作为电流源功率晶体管的反馈网络，所提出的 BGR 节省了芯片面积，降低了噪声，同时支持电流负载驱动。该电路在两个不同的过程中实现性能比较，即 $0.18\mathbf {\mathrm {\mu }}\text{m}$RF CMOS 和 BCD 混合信号 CMOS 工艺。两种工艺的芯片样品的测量结果显示出相似的性能，平均温度系数 (TC) 为 27.1ppm/°C，超过 $\mathbf {-} 40\mathbf {\mathrm {\sim }} 125\mathbf {^{\circ} }\text{C}$在 1.8-V 电源。相应的测量变异系数 ( $\mathbf {\mathrm {\sigma }}/\mathbf {\mathrm {\mu }}$ ) 约为 0.3%，负载驱动能力可达 $800\mathbf {\mathrm {\mu }}\text{A}$ . 通过重复使用反馈电阻，芯片原型实现了低噪声密度 $1.92~\mathbf {\mathrm {\mu }}\text{V}/\surd $ 赫兹，285nV/ $\surd $ 赫兹和 4nV/ $\surd $ Hz 分别为 10 Hz、10 kHz 和 100 kHz，同时消耗 396nA 的静态电流。测得的电源抑制 (PSR) 在 5Hz 时为 -39dB，在 1MHz 时为 -45dB。负载电流对PSR的影响也进行了分析验证。