The Gallium Nitride GaN based power switching device EPC2206 has a Land Grid Array (LGA) packaging with a pitch between pads of 400 μm. This low pitch does not facilitate transistor connection on a test vehicle in the context of aging tests where the component must undergo repetitive sequences of I(V) and C(V) characterizations, threshold voltage, leakage currents and then repetitive stress. Thus, the purpose of this paper is to adapt this encapsulated power switching device for coaxial or coplanar type measurements and to look for the best configuration to move this transistor from one test bench to another by using an adaptation system on a printed circuit board (PCB). To choose the best performances of three adaptation system configurations, this paper presents, on the one hand, an experimental study on I(V) characterization, threshold voltage Vth, drain leakage current Idss, gate leakage current Igss. On the other hand, a series of measurements of these different characteristics was carried out on the three EPC2206 connection configurations to validate the reproducibility of the measurements.

基于氮化镓 GaN 的电源开关器件 EPC2206 采用焊盘间距为 400 μm 的焊盘网格阵列 (LGA) 封装。在老化测试的情况下，这种低间距不利于测试车辆上的晶体管连接，其中组件必​​须经历重复序列的 I(V) 和 C(V) 表征、阈值电压、泄漏电流，然后是重复应力。因此，本文的目的是使这种封装的功率开关器件适用于同轴或共面型测量，并通过使用印刷电路板（PCB ）。为了选择三种适应系统配置的最佳性能，本文一方面提出了关于 I(V) 表征的实验研究，阈值电压Vth、漏极漏电流Idss、栅极漏电流Igss。另一方面，对三种 EPC2206 连接配置进行了这些不同特性的一系列测量，以验证测量的可重复性。