Short-circuit (SC) robustness is necessary for GaN adoption in industrial applications but continued efforts are needed to make them ready for real-world use. This work presents the results of >160 destructive tests performed on commercially available 600 V and 650 V GaN HEMT transistors from four different manufacturers with different structures (p-GaN and cascode). Under a DC-bus voltage of 400 V, the robustness is strongly dispersed: the Time To Failure (TTF) varies from hundreds of nanoseconds to hundreds of microseconds. But at a lower voltage (270 V), the TTF is generally in the millisecond range.

中文翻译：

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p-GaN和级联晶体管的短路鲁棒性研究

短路 (SC) 稳健性对于工业应用中采用 GaN 是必要的，但需要继续努力以使其为实际使用做好准备。这项工作展示了对来自具有不同结构（p-GaN 和共源共栅）的四个不同制造商的商用 600 V 和 650 V GaN HEMT 晶体管进行的超过 160 次破坏性测试的结果。在 400 V 的直流总线电压下，鲁棒性非常分散：故障时间 (TTF) 从数百纳秒到数百微秒不等。但在较低电压 (270 V) 下，TTF 通常在毫秒范围内。