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Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2022-09-25 , DOI: 10.1016/j.microrel.2022.114680
Yu-Yun Wang, Kuan-Chi Wang, Ting-Yu Chang, Nicolò Ronchi, Barry O'Sullivan, Kaustuv Banerjee, Geert van den Bosch, Jan Van Houdt, Tian-Li Wu

In this work, the relaxation analysis is performed to understand the VTH instability in FeFETs with two different dopants, i.e., Si and Gd. The FeFETs with different dopants show the different delay-after-write characteristics, i.e., Gd:HfO2 FeFETs show a better delay-after-write stability compared to the case of Si:HfO2 FeFETs. With the relaxation analysis, Si:HfO2 FeFETs exhibit an obvious VTH recovery during the relaxation phases. Furthermore, the power law fitting is used to analyze the VTH shift under the positive program bias, indicating that a wide and easily accessible defects can exist in the IL and/or Si:HfO2 since the smaller overdrive voltage dependence exponent (γ) is obtained in Si:HfO2. Last, the smaller VTH shift/recovery in Gd:HfO2 FeFETs can be attributed to a relatively tighter defect distribution, indicating that the dopants in the ferroelectric layer and the defects in IL and/or ferroelectric dielectric have to be carefully optimized to achieve the better VTH stability.



中文翻译:

弛豫分析以了解具有 Si 和 Gd 掺杂剂的铁电 FET 中的正偏压诱导俘获

在这项工作中,执行弛豫分析以了解具有两种不同掺杂剂(即 Si 和 Gd)的 FeFET 中的 V TH不稳定性。具有不同掺杂剂的FeFET表现出不同的写后延迟特性,即,与Si:HfO 2 FeFET的情况相比,Gd:HfO 2 FeFET表现出更好的写后延迟稳定性。通过弛豫分析,Si:HfO 2 FeFET在弛豫阶段表现出明显的 V TH恢复。此外,幂律拟合用于分析正编程偏差下的 V TH偏移,表明 IL 和/或 Si:HfO 2中可能存在广泛且易于访问的缺陷因为在 Si:HfO 2中获得了较小的过驱动电压相关指数 ( γ ) 。最后, Gd:HfO 2 FeFET 中较小的 V TH偏移/恢复可归因于相对更紧密的缺陷分布,这表明必须仔细优化铁电层中的掺杂剂以及 IL 和/或铁电电介质中的缺陷以实现V TH稳定性越好。

更新日期:2022-09-26
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